Study and simulation of electron transport in Ga{sub 0.5}ln{sub 0.5}Sb based on Monte Carlo method

Journal Article · Fri Dec 15 00:00:00 EST 2017 · Semiconductors

DOI:https://doi.org/10.1134/S1063782617120053· OSTI ID:22756236

Bouazza, B.; Belhadji, Y.; Massoum, N. ^[1]

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1. Abou Bakr Belkaid University, Research Unit of Materials and Renewable Energies (Algeria)

This work addresses the issue related to the electronic transport in the III–V ternary material Ga{sub 0.5}ln{sub 0.5}Sb using Monte Carlo method. We investigated the electronic motion in the three valleys Γ, L, and X of the conduction band. These three valleys are isotropic, non-parabolic and centred on the first Brillouin zone. In our study, we included scatterings with ionised impurities, acoustic and polar optical phonons, as well as, intervalley and intravalley interactions. We discussed the electronic transport characteristics at the stationary and the transient regimes in function of temperature and electric field.

• OSTI ID: 22756236
• Journal Information: Semiconductors, Vol. 51, Issue 12; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BRILLOUIN ZONES
ELECTRIC FIELDS
MONTE CARLO METHOD
TEMPERATURE DEPENDENCE