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Title: Al-doped and pure ZnO thin films elaborated by sol–gel spin coating process for optoelectronic applications

Abstract

Pure and aluminum-doped zinc oxide thin films were grown by spin coating at room temperature. As a starting material, zinc acetate was used. The dopant source was aluminum nitrate; the dopant molar ratio was varied between 1 and 10%. Structural analysis reveals that all films consist of single hexagonal wurtzite phase ZnO, and a preferential orientation along c-axis. They have a homogeneous surface. The measurements show that the films are nanostructured. The transmittance is greater than 75% in the visible region. The band gap energy decreases with the addition of dopant (Al) in prepared thin films and the resistivity decreases significantly.

Authors:
 [1];  [2];  [3]
  1. Ziane Achour University, Department of Science of Matter (Algeria)
  2. University of Orleans, ICMN, IUT Chartres (France)
  3. Mohamed Khider University, Department of Science of Matter (Algeria)
Publication Date:
OSTI Identifier:
22756233
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 51; Journal Issue: 12; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRATES; DOPED MATERIALS; SPIN-ON COATING; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; ZINC OXIDES

Citation Formats

Maache, M., E-mail: moumos2001@gmail.com, Devers, T., and Chala, A. Al-doped and pure ZnO thin films elaborated by sol–gel spin coating process for optoelectronic applications. United States: N. p., 2017. Web. doi:10.1134/S1063782617120132.
Maache, M., E-mail: moumos2001@gmail.com, Devers, T., & Chala, A. Al-doped and pure ZnO thin films elaborated by sol–gel spin coating process for optoelectronic applications. United States. doi:10.1134/S1063782617120132.
Maache, M., E-mail: moumos2001@gmail.com, Devers, T., and Chala, A. Fri . "Al-doped and pure ZnO thin films elaborated by sol–gel spin coating process for optoelectronic applications". United States. doi:10.1134/S1063782617120132.
@article{osti_22756233,
title = {Al-doped and pure ZnO thin films elaborated by sol–gel spin coating process for optoelectronic applications},
author = {Maache, M., E-mail: moumos2001@gmail.com and Devers, T. and Chala, A.},
abstractNote = {Pure and aluminum-doped zinc oxide thin films were grown by spin coating at room temperature. As a starting material, zinc acetate was used. The dopant source was aluminum nitrate; the dopant molar ratio was varied between 1 and 10%. Structural analysis reveals that all films consist of single hexagonal wurtzite phase ZnO, and a preferential orientation along c-axis. They have a homogeneous surface. The measurements show that the films are nanostructured. The transmittance is greater than 75% in the visible region. The band gap energy decreases with the addition of dopant (Al) in prepared thin films and the resistivity decreases significantly.},
doi = {10.1134/S1063782617120132},
journal = {Semiconductors},
issn = {1063-7826},
number = 12,
volume = 51,
place = {United States},
year = {2017},
month = {12}
}