A comparative study on the electronic and optical properties of Sb{sub 2}Se{sub 3} thin film
Abstract
The thin film of Sb{sub 2}Se{sub 3} was deposited by thermal evaporation method and the film was annealed in N{sub 2} flow in a three zone furnace at a temperature of 290°С for 30 min. The structural properties were characterized by scanning electron microscopy (SEM), transmission electron microscopy (ТЕМ), X-ray diffraction (XRD) and Raman spectroscopy, respectively. It is seen that the as-deposited film is amorphous and the annealed film is polycrystalline in nature. The surface of Sb{sub 2}Se{sub 3} film is oxidized with a thickness of 1.15 nm investigated by X-ray photolecetron spectroscopy (XPS) measurement. Spectroscopic ellipsometry (SE) and UV–vis spectroscopy measurements were carried out to study the optical properties of Sb{sub 2}Se{sub 3} film. In addition, the first principles calculations were applied to study the electronic and optical properties of Sb{sub 2}Se{sub 3}. From the theoretical calculation it is seen that Sb{sub 2}Se{sub 3} is intrinsically an indirect band gap semiconductor. Importantly, the experimental band gap is in good agreement with the theoretical band gap. Furthermore, the experimental values of n, k, ε{sub 1}, and ε{sub 2} are much closer to the theoretical results. However, the obtained large dielectric constants and refractive index values suggest that exciton binding energymore »
- Authors:
-
- City University of Hong Kong, Department of Physics and Materials Science (China)
- Publication Date:
- OSTI Identifier:
- 22756231
- Resource Type:
- Journal Article
- Journal Name:
- Semiconductors
- Additional Journal Information:
- Journal Volume: 51; Journal Issue: 12; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ANTIMONY SELENIDES; BINDING ENERGY; DIELECTRIC MATERIALS; NANOSTRUCTURES; RAMAN SPECTROSCOPY; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SOLAR CELLS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY; X-RAY SPECTROSCOPY
Citation Formats
Kamruzzaman, M., E-mail: kzaman.phy17@gmail.com, Liu, Chaoping, Farid Ul Islam, A. K. M., E-mail: farid-ru@yahoo.com, and Zapien, J. A., E-mail: apjazs@cityu.edu.hk. A comparative study on the electronic and optical properties of Sb{sub 2}Se{sub 3} thin film. United States: N. p., 2017.
Web. doi:10.1134/S1063782617120107.
Kamruzzaman, M., E-mail: kzaman.phy17@gmail.com, Liu, Chaoping, Farid Ul Islam, A. K. M., E-mail: farid-ru@yahoo.com, & Zapien, J. A., E-mail: apjazs@cityu.edu.hk. A comparative study on the electronic and optical properties of Sb{sub 2}Se{sub 3} thin film. United States. https://doi.org/10.1134/S1063782617120107
Kamruzzaman, M., E-mail: kzaman.phy17@gmail.com, Liu, Chaoping, Farid Ul Islam, A. K. M., E-mail: farid-ru@yahoo.com, and Zapien, J. A., E-mail: apjazs@cityu.edu.hk. 2017.
"A comparative study on the electronic and optical properties of Sb{sub 2}Se{sub 3} thin film". United States. https://doi.org/10.1134/S1063782617120107.
@article{osti_22756231,
title = {A comparative study on the electronic and optical properties of Sb{sub 2}Se{sub 3} thin film},
author = {Kamruzzaman, M., E-mail: kzaman.phy17@gmail.com and Liu, Chaoping and Farid Ul Islam, A. K. M., E-mail: farid-ru@yahoo.com and Zapien, J. A., E-mail: apjazs@cityu.edu.hk},
abstractNote = {The thin film of Sb{sub 2}Se{sub 3} was deposited by thermal evaporation method and the film was annealed in N{sub 2} flow in a three zone furnace at a temperature of 290°С for 30 min. The structural properties were characterized by scanning electron microscopy (SEM), transmission electron microscopy (ТЕМ), X-ray diffraction (XRD) and Raman spectroscopy, respectively. It is seen that the as-deposited film is amorphous and the annealed film is polycrystalline in nature. The surface of Sb{sub 2}Se{sub 3} film is oxidized with a thickness of 1.15 nm investigated by X-ray photolecetron spectroscopy (XPS) measurement. Spectroscopic ellipsometry (SE) and UV–vis spectroscopy measurements were carried out to study the optical properties of Sb{sub 2}Se{sub 3} film. In addition, the first principles calculations were applied to study the electronic and optical properties of Sb{sub 2}Se{sub 3}. From the theoretical calculation it is seen that Sb{sub 2}Se{sub 3} is intrinsically an indirect band gap semiconductor. Importantly, the experimental band gap is in good agreement with the theoretical band gap. Furthermore, the experimental values of n, k, ε{sub 1}, and ε{sub 2} are much closer to the theoretical results. However, the obtained large dielectric constants and refractive index values suggest that exciton binding energy in Sb{sub 2}Se{sub 3} should be relatively small and an antireflective coating is recommended to enhance the light absorption of Sb{sub 2}Se{sub 3} for thin film solar cells application.},
doi = {10.1134/S1063782617120107},
url = {https://www.osti.gov/biblio/22756231},
journal = {Semiconductors},
issn = {1063-7826},
number = 12,
volume = 51,
place = {United States},
year = {Fri Dec 15 00:00:00 EST 2017},
month = {Fri Dec 15 00:00:00 EST 2017}
}