Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p–i–n Structures on the Relaxation time of Nonequilibrium Carriers
- Ioffe Institute (Russian Federation)
The results of an experimental study of the capacitance–voltage (C–V) characteristics and deep-level transient spectroscopy (DLTS) spectra of p{sup +}–p{sup 0}–i–n{sup 0} homostructures based on undoped dislocationfree GaAs layers and InGaAs/GaAs and GaAsSb/GaAs heterostructures with homogeneous networks of misfit dislocations, all grown by liquid-phase epitaxy (LPE), are presented. Deep-level acceptor defects identified as HL2 and HL5 are found in the epitaxial p{sup 0} and n{sup 0} layers of the GaAs-based structure. The electron and hole dislocation-related deep levels, designated as, respectively, ED1 and HD3, are detected in InGaAs/GaAs and GaAsSb/GaAs heterostructures. The following hole trap parameters: thermal activation energies (E{sub t}), capture cross sections (σ{sub p}), and concentrations (N{sub t}) are calculated from the Arrhenius dependences to be E{sub t} = 845 meV, σ{sub p} = 1.33 × 10{sup –12} cm{sup 2}, N{sub t} = 3.80 × 10{sup 14} cm{sup –3} for InGaAs/GaAs and E{sub t} = 848 meV, σ{sub p} = 2.73 × 10{sup –12} cm{sup 2}, N{sub t} = 2.40 × 10{sup 14} cm{sup –3} for GaAsSb/GaAs heterostructures. The concentration relaxation times of nonequilibrium carriers are estimated for the case in which dislocation-related deep acceptor traps are involved in this process. These are 2 × 10{sup –10} s and 1.5 × 10{sup –10} s for, respectively, the InGaAs/GaAs and GaAsSb/GaAs heterostructures and 1.6 × 10{sup –6} s for the GaAs homostructures.
- OSTI ID:
- 22756211
- Journal Information:
- Semiconductors, Vol. 52, Issue 2; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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