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Title: Microstructure and Raman Scattering of Cu{sub 2}ZnSnSe{sub 4} Thin Films Deposited onto Flexible Metal Substrates

Abstract

Cu{sub 2}ZnSnSe{sub 4} thin films are produced by selenizing electrochemically layer-by-layer deposited and preliminarily annealed Cu–Zn–Sn precursors. For flexible metal substrates, Mo and Ta foils are used. The morphology, elemental and phase compositions, and crystal structure of Cu{sub 2}ZnSnSe{sub 4} films are studied by scanning electron microscopy, X-ray spectral microanalysis, X-ray phase analysis, and Raman spectroscopy.

Authors:
; ;  [1];  [2];  [3];  [4];  [3];  [5]
  1. National Academy of Sciences of Belarus, Scientific and Practical Materials Research Center (Belarus)
  2. Belarusian State University (Belarus)
  3. State Research Institute “Center for Physical Sciences and Technology” (Lithuania)
  4. Russian Academy of Sciences, Institute of Problems of Chemical Physics (Russian Federation)
  5. Al-Balqa Applied University (Jordan)
Publication Date:
OSTI Identifier:
22756205
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 2; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL STRUCTURE; DEPOSITS; ELECTROCHEMISTRY; METALS; PHASE STUDIES; RAMAN EFFECT; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; THIN FILMS; X RADIATION

Citation Formats

Stanchik, A. V., E-mail: alena.stanchik@bk.ru, Gremenok, V. F., Bashkirov, S. A., Tivanov, M. S., Juškénas, R. L., Novikov, G. F., Giraitis, R., and Saad, A. M.. Microstructure and Raman Scattering of Cu{sub 2}ZnSnSe{sub 4} Thin Films Deposited onto Flexible Metal Substrates. United States: N. p., 2018. Web. doi:10.1134/S1063782618020197.
Stanchik, A. V., E-mail: alena.stanchik@bk.ru, Gremenok, V. F., Bashkirov, S. A., Tivanov, M. S., Juškénas, R. L., Novikov, G. F., Giraitis, R., & Saad, A. M.. Microstructure and Raman Scattering of Cu{sub 2}ZnSnSe{sub 4} Thin Films Deposited onto Flexible Metal Substrates. United States. doi:10.1134/S1063782618020197.
Stanchik, A. V., E-mail: alena.stanchik@bk.ru, Gremenok, V. F., Bashkirov, S. A., Tivanov, M. S., Juškénas, R. L., Novikov, G. F., Giraitis, R., and Saad, A. M.. Thu . "Microstructure and Raman Scattering of Cu{sub 2}ZnSnSe{sub 4} Thin Films Deposited onto Flexible Metal Substrates". United States. doi:10.1134/S1063782618020197.
@article{osti_22756205,
title = {Microstructure and Raman Scattering of Cu{sub 2}ZnSnSe{sub 4} Thin Films Deposited onto Flexible Metal Substrates},
author = {Stanchik, A. V., E-mail: alena.stanchik@bk.ru and Gremenok, V. F. and Bashkirov, S. A. and Tivanov, M. S. and Juškénas, R. L. and Novikov, G. F. and Giraitis, R. and Saad, A. M.},
abstractNote = {Cu{sub 2}ZnSnSe{sub 4} thin films are produced by selenizing electrochemically layer-by-layer deposited and preliminarily annealed Cu–Zn–Sn precursors. For flexible metal substrates, Mo and Ta foils are used. The morphology, elemental and phase compositions, and crystal structure of Cu{sub 2}ZnSnSe{sub 4} films are studied by scanning electron microscopy, X-ray spectral microanalysis, X-ray phase analysis, and Raman spectroscopy.},
doi = {10.1134/S1063782618020197},
journal = {Semiconductors},
issn = {1063-7826},
number = 2,
volume = 52,
place = {United States},
year = {2018},
month = {2}
}