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Title: Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in Al{sub x}Ga{sub 1–} {sub x}N:Si Layers Obtained by Ammonia Molecular Beam Epitaxy

Abstract

The deformation mode and defect structure of Al{sub x}Ga{sub 1–} {sub x}N:Si epitaxial layers (x = 0–0.7) grown by molecular beam epitaxy and doped with Si under a constant silane flux are studied by X-ray diffractometry. The concentration of Si atoms in the layers measured by secondary ion mass spectrometry is (4.0–8.0) × 10{sup 19} cm{sup –3}. It is found that the lateral residual stresses are compressive at x < 0.4 and become tensile at x > 0.4. The stresses after the end of growth are estimated and the contribution to the deformation mode of the layers of both the coalescence of nuclei of the growing layer and misfit stresses in the layer–buffer system are discussed. It is found that the density of vertical screw and edge dislocations are maximal at x = 0.7 and equal to 1.5 × 10{sup 10} and 8.2 × 10{sup 10} cm{sup –2}, respectively.

Authors:
; ; ;  [1]; ; ;  [2]
  1. Ioffe Institute (Russian Federation)
  2. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22756204
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 2; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; DOPED MATERIALS; EDGE DISLOCATIONS; IONS; MASS SPECTROSCOPY; MOLECULAR BEAM EPITAXY; RESIDUAL STRESSES; X-RAY DIFFRACTION

Citation Formats

Ratnikov, V. V., E-mail: ratnikov@mail.ioffe.ru, Sheglov, M. P., Ber, B. Ya., Kazantsev, D. Yu., Osinnykh, I. V., Malin, T. V., and Zhuravlev, K. S. Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in Al{sub x}Ga{sub 1–} {sub x}N:Si Layers Obtained by Ammonia Molecular Beam Epitaxy. United States: N. p., 2018. Web. doi:10.1134/S1063782618020136.
Ratnikov, V. V., E-mail: ratnikov@mail.ioffe.ru, Sheglov, M. P., Ber, B. Ya., Kazantsev, D. Yu., Osinnykh, I. V., Malin, T. V., & Zhuravlev, K. S. Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in Al{sub x}Ga{sub 1–} {sub x}N:Si Layers Obtained by Ammonia Molecular Beam Epitaxy. United States. doi:10.1134/S1063782618020136.
Ratnikov, V. V., E-mail: ratnikov@mail.ioffe.ru, Sheglov, M. P., Ber, B. Ya., Kazantsev, D. Yu., Osinnykh, I. V., Malin, T. V., and Zhuravlev, K. S. Thu . "Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in Al{sub x}Ga{sub 1–} {sub x}N:Si Layers Obtained by Ammonia Molecular Beam Epitaxy". United States. doi:10.1134/S1063782618020136.
@article{osti_22756204,
title = {Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in Al{sub x}Ga{sub 1–} {sub x}N:Si Layers Obtained by Ammonia Molecular Beam Epitaxy},
author = {Ratnikov, V. V., E-mail: ratnikov@mail.ioffe.ru and Sheglov, M. P. and Ber, B. Ya. and Kazantsev, D. Yu. and Osinnykh, I. V. and Malin, T. V. and Zhuravlev, K. S.},
abstractNote = {The deformation mode and defect structure of Al{sub x}Ga{sub 1–} {sub x}N:Si epitaxial layers (x = 0–0.7) grown by molecular beam epitaxy and doped with Si under a constant silane flux are studied by X-ray diffractometry. The concentration of Si atoms in the layers measured by secondary ion mass spectrometry is (4.0–8.0) × 10{sup 19} cm{sup –3}. It is found that the lateral residual stresses are compressive at x < 0.4 and become tensile at x > 0.4. The stresses after the end of growth are estimated and the contribution to the deformation mode of the layers of both the coalescence of nuclei of the growing layer and misfit stresses in the layer–buffer system are discussed. It is found that the density of vertical screw and edge dislocations are maximal at x = 0.7 and equal to 1.5 × 10{sup 10} and 8.2 × 10{sup 10} cm{sup –2}, respectively.},
doi = {10.1134/S1063782618020136},
journal = {Semiconductors},
issn = {1063-7826},
number = 2,
volume = 52,
place = {United States},
year = {2018},
month = {2}
}