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Title: Electrical Activity of Extended Defects in Multicrystalline Silicon

Abstract

The excess carrier lifetime (τ) distribution in multicrystalline silicon grown by the Bridgman technique from high-purity metallurgical silicon (HPMG-Si) is studied. The features of the variation in τ, caused by the grain-boundary structure of ingots, are revealed. The grain boundaries, dislocations, and impurity microinclusions are studied by electron probe microanalysis (EPMA) and scanning electron microscopy (SEM) using selective acid etching. The electrical activity of extended defects is measured by the electronbeam- induced-current (EBIC) method.

Authors:
 [1];  [2]; ;  [1];  [2];  [1]
  1. Russian Academy of Sciences, Vinogradov Institute of Geochemistry, Siberian Branch (Russian Federation)
  2. Russian Academy of Sciences, Institute of Microelectronics Technology and High Purity Materials (Russian Federation)
Publication Date:
OSTI Identifier:
22756199
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 2; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARRIER LIFETIME; DEFECTS; ELECTRON MICROPROBE ANALYSIS; GRAIN BOUNDARIES; SCANNING ELECTRON MICROSCOPY; SILICON

Citation Formats

Pescherova, S. M., E-mail: spescherova@mail.ru, Yakimov, E. B., Nepomnyashchikh, A. I., Pavlova, L. A., Feklisova, O. V., and Presnyakov, R. V.. Electrical Activity of Extended Defects in Multicrystalline Silicon. United States: N. p., 2018. Web. doi:10.1134/S1063782618020124.
Pescherova, S. M., E-mail: spescherova@mail.ru, Yakimov, E. B., Nepomnyashchikh, A. I., Pavlova, L. A., Feklisova, O. V., & Presnyakov, R. V.. Electrical Activity of Extended Defects in Multicrystalline Silicon. United States. doi:10.1134/S1063782618020124.
Pescherova, S. M., E-mail: spescherova@mail.ru, Yakimov, E. B., Nepomnyashchikh, A. I., Pavlova, L. A., Feklisova, O. V., and Presnyakov, R. V.. Thu . "Electrical Activity of Extended Defects in Multicrystalline Silicon". United States. doi:10.1134/S1063782618020124.
@article{osti_22756199,
title = {Electrical Activity of Extended Defects in Multicrystalline Silicon},
author = {Pescherova, S. M., E-mail: spescherova@mail.ru and Yakimov, E. B. and Nepomnyashchikh, A. I. and Pavlova, L. A. and Feklisova, O. V. and Presnyakov, R. V.},
abstractNote = {The excess carrier lifetime (τ) distribution in multicrystalline silicon grown by the Bridgman technique from high-purity metallurgical silicon (HPMG-Si) is studied. The features of the variation in τ, caused by the grain-boundary structure of ingots, are revealed. The grain boundaries, dislocations, and impurity microinclusions are studied by electron probe microanalysis (EPMA) and scanning electron microscopy (SEM) using selective acid etching. The electrical activity of extended defects is measured by the electronbeam- induced-current (EBIC) method.},
doi = {10.1134/S1063782618020124},
journal = {Semiconductors},
issn = {1063-7826},
number = 2,
volume = 52,
place = {United States},
year = {2018},
month = {2}
}