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Title: Luminescence Properties of Cd{sub x}Zn{sub 1–} {sub x}O Thin Films

Abstract

Thin Cd{sub x}Zn{sub 1–} {sub x}O films with a Cd content in the range from zero to 35 at % are synthesized by pulsed laser deposition. A record-breaking solubility limit of 30 at % of Cd in wurtzite-structured Cd{sub x}Zn{sub 1–} {sub x}O thin films is attained. Apart from the exciton peak, additional peaks associated with an inhomogeneous distribution of Cd in the samples are observed in the low-temperature (10 K) photoluminescence spectra of Cd{sub 0.15}Zn{sub 0.85}O and Cd{sub 0.3}Zn{sub 0.7}O films. An unsteady (S-like) temperature dependence of the spectral position of the exciton photoluminescence peak in Cd{sub x}Zn{sub 1–} {sub x}O films is observed. Such a dependence is associated with the effect of the localization of charge carriers.

Authors:
; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Institute on Laser and Information Technologies—Branch of the Federal Scientific Research Center “Crystallography and Photonics” (Russian Federation)
Publication Date:
OSTI Identifier:
22756198
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 2; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHARGE CARRIERS; ENERGY BEAM DEPOSITION; LASER RADIATION; PEAKS; PULSED IRRADIATION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; THIN FILMS

Citation Formats

Lotin, A. A., E-mail: lotin-82@mail.ru, Novodvorsky, O. A., Parshina, L. S., Khramova, O. D., Cherebylo, E. A., and Mikhalevsky, V. A. Luminescence Properties of Cd{sub x}Zn{sub 1–} {sub x}O Thin Films. United States: N. p., 2018. Web. doi:10.1134/S1063782618020069.
Lotin, A. A., E-mail: lotin-82@mail.ru, Novodvorsky, O. A., Parshina, L. S., Khramova, O. D., Cherebylo, E. A., & Mikhalevsky, V. A. Luminescence Properties of Cd{sub x}Zn{sub 1–} {sub x}O Thin Films. United States. doi:10.1134/S1063782618020069.
Lotin, A. A., E-mail: lotin-82@mail.ru, Novodvorsky, O. A., Parshina, L. S., Khramova, O. D., Cherebylo, E. A., and Mikhalevsky, V. A. Thu . "Luminescence Properties of Cd{sub x}Zn{sub 1–} {sub x}O Thin Films". United States. doi:10.1134/S1063782618020069.
@article{osti_22756198,
title = {Luminescence Properties of Cd{sub x}Zn{sub 1–} {sub x}O Thin Films},
author = {Lotin, A. A., E-mail: lotin-82@mail.ru and Novodvorsky, O. A. and Parshina, L. S. and Khramova, O. D. and Cherebylo, E. A. and Mikhalevsky, V. A.},
abstractNote = {Thin Cd{sub x}Zn{sub 1–} {sub x}O films with a Cd content in the range from zero to 35 at % are synthesized by pulsed laser deposition. A record-breaking solubility limit of 30 at % of Cd in wurtzite-structured Cd{sub x}Zn{sub 1–} {sub x}O thin films is attained. Apart from the exciton peak, additional peaks associated with an inhomogeneous distribution of Cd in the samples are observed in the low-temperature (10 K) photoluminescence spectra of Cd{sub 0.15}Zn{sub 0.85}O and Cd{sub 0.3}Zn{sub 0.7}O films. An unsteady (S-like) temperature dependence of the spectral position of the exciton photoluminescence peak in Cd{sub x}Zn{sub 1–} {sub x}O films is observed. Such a dependence is associated with the effect of the localization of charge carriers.},
doi = {10.1134/S1063782618020069},
journal = {Semiconductors},
issn = {1063-7826},
number = 2,
volume = 52,
place = {United States},
year = {2018},
month = {2}
}