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Title: Floquet Engineering of Gapped 2D Materials

Abstract

It is demonstrated theoretically that the interaction of gapped 2D materials (gapped graphene and transition metal dichalchogenide monolayers) with a strong high-frequency electromagnetic field (dressing field) crucially changes the band structure of the materials. As a consequence, the renormalized band structure of the materials drastically depends on the field polarization. Particularly, a linearly polarized dressing field always decreases band gaps, whereas a circularly polarized field breaks the equivalence of band valleys in different points of the Brillouin zone and can both increase and decrease corresponding band gaps. It is shown also that a dressing field can turn both the band gaps and the spin splitting of the bands into zero. As a result, the dressing field can serve as an effective tool to control spin and valley properties of the materials in various optoelectronic applications.

Authors:
 [1];  [2];  [3];  [2]
  1. Novosibirsk State Technical University, Department of Applied and Theoretical Physics (Russian Federation)
  2. University of Iceland, Science Institute (Iceland)
  3. ITMO University (Russian Federation)
Publication Date:
OSTI Identifier:
22756148
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 4; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; BRILLOUIN ZONES; EFFICIENCY; ELECTROMAGNETIC FIELDS; GRAPHENE; TRANSITION ELEMENTS

Citation Formats

Kibis, O. V., E-mail: oleg.kibis@nstu.ru, Dini, K., Iorsh, I. V., and Shelykh, I. A. Floquet Engineering of Gapped 2D Materials. United States: N. p., 2018. Web. doi:10.1134/S1063782618040176.
Kibis, O. V., E-mail: oleg.kibis@nstu.ru, Dini, K., Iorsh, I. V., & Shelykh, I. A. Floquet Engineering of Gapped 2D Materials. United States. doi:10.1134/S1063782618040176.
Kibis, O. V., E-mail: oleg.kibis@nstu.ru, Dini, K., Iorsh, I. V., and Shelykh, I. A. Sun . "Floquet Engineering of Gapped 2D Materials". United States. doi:10.1134/S1063782618040176.
@article{osti_22756148,
title = {Floquet Engineering of Gapped 2D Materials},
author = {Kibis, O. V., E-mail: oleg.kibis@nstu.ru and Dini, K. and Iorsh, I. V. and Shelykh, I. A.},
abstractNote = {It is demonstrated theoretically that the interaction of gapped 2D materials (gapped graphene and transition metal dichalchogenide monolayers) with a strong high-frequency electromagnetic field (dressing field) crucially changes the band structure of the materials. As a consequence, the renormalized band structure of the materials drastically depends on the field polarization. Particularly, a linearly polarized dressing field always decreases band gaps, whereas a circularly polarized field breaks the equivalence of band valleys in different points of the Brillouin zone and can both increase and decrease corresponding band gaps. It is shown also that a dressing field can turn both the band gaps and the spin splitting of the bands into zero. As a result, the dressing field can serve as an effective tool to control spin and valley properties of the materials in various optoelectronic applications.},
doi = {10.1134/S1063782618040176},
journal = {Semiconductors},
issn = {1063-7826},
number = 4,
volume = 52,
place = {United States},
year = {2018},
month = {4}
}