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Title: On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation

Abstract

A new method for the formation of lateral p–n junctions in epitaxial graphene with the use of UV (ultraviolet) radiation is considered. The UV illumination method makes it possible to obtain large-size p–n junctions. Such p–n junctions are investigated in the photocurrent and photoconductivity modes under irradiation with terahertz radiation. The mechanisms of terahertz photoresponse in graphene p–n junctions are discussed.

Authors:
;  [1];  [2]; ;  [3]
  1. Ioffe Institute (Russian Federation)
  2. Aalto University (Aalto-yliopisto), Micro and Nanoscience Laboratory (Finland)
  3. Terahertz Center TerZ, University of Regensburg (Institut für Angewandte Physik, Universitüt Regensburg) (Germany)
Publication Date:
OSTI Identifier:
22756140
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 8; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; EPITAXY; GRAPHENE; P-N JUNCTIONS; SUPERCONDUCTING JUNCTIONS; ULTRAVIOLET RADIATION

Citation Formats

Vasileva, G. Yu., Vasilyev, Yu. B., E-mail: yu.vasilyev@mail.ioffe.ru, Novikov, S. N., Danilov, S. N., and Ganichev, S. D. On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation. United States: N. p., 2018. Web. doi:10.1134/S1063782618080225.
Vasileva, G. Yu., Vasilyev, Yu. B., E-mail: yu.vasilyev@mail.ioffe.ru, Novikov, S. N., Danilov, S. N., & Ganichev, S. D. On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation. United States. doi:10.1134/S1063782618080225.
Vasileva, G. Yu., Vasilyev, Yu. B., E-mail: yu.vasilyev@mail.ioffe.ru, Novikov, S. N., Danilov, S. N., and Ganichev, S. D. Wed . "On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation". United States. doi:10.1134/S1063782618080225.
@article{osti_22756140,
title = {On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation},
author = {Vasileva, G. Yu. and Vasilyev, Yu. B., E-mail: yu.vasilyev@mail.ioffe.ru and Novikov, S. N. and Danilov, S. N. and Ganichev, S. D.},
abstractNote = {A new method for the formation of lateral p–n junctions in epitaxial graphene with the use of UV (ultraviolet) radiation is considered. The UV illumination method makes it possible to obtain large-size p–n junctions. Such p–n junctions are investigated in the photocurrent and photoconductivity modes under irradiation with terahertz radiation. The mechanisms of terahertz photoresponse in graphene p–n junctions are discussed.},
doi = {10.1134/S1063782618080225},
journal = {Semiconductors},
issn = {1063-7826},
number = 8,
volume = 52,
place = {United States},
year = {2018},
month = {8}
}