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Title: Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells

Abstract

The mobility and quantum time of Dirac electrons in HgTe quantum wells with near-critical thickness corresponding to the transition from the direct to inverted spectrum are experimentally and theoretically investigated. The nonmonotonic dependence of the mobility on the electron concentration is experimentally established. The theory of the scattering of Dirac electrons by impurities and irregularities of the well boundaries leading to well thickness fluctuations is constructed. The comparison of this theory with an experiment shows their good agreement and explains the observed nonmonotonic behavior by a decrease in the ratio between the de Broglie wavelength of Dirac electrons and the characteristic size of irregularities with increasing electron concentration. It is established that the transport time is larger than the quantum time by almost an order of magnitude in the case of the dominance of roughness scattering. The transition from macroscopic to mesoscopic samples is studied and an abrupt decrease in both the mobility and quantum time is observed. This behavior is attributed to the size effect on the free path length.

Authors:
; ; ; ;  [1]
  1. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22756136
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 11; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; DE BROGLIE WAVELENGTH; EFFICIENCY; ELECTRON MOBILITY; MERCURY TELLURIDES; QUANTUM WELLS

Citation Formats

Dobretsova, A. A., E-mail: DobretsovaAA@gmail.com, Kvon, Z. D., Braginskii, L. S., Entin, M. V., and Mikhailov, N. N. Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells. United States: N. p., 2018. Web. doi:10.1134/S1063782618110076.
Dobretsova, A. A., E-mail: DobretsovaAA@gmail.com, Kvon, Z. D., Braginskii, L. S., Entin, M. V., & Mikhailov, N. N. Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells. United States. doi:10.1134/S1063782618110076.
Dobretsova, A. A., E-mail: DobretsovaAA@gmail.com, Kvon, Z. D., Braginskii, L. S., Entin, M. V., and Mikhailov, N. N. Thu . "Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells". United States. doi:10.1134/S1063782618110076.
@article{osti_22756136,
title = {Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells},
author = {Dobretsova, A. A., E-mail: DobretsovaAA@gmail.com and Kvon, Z. D. and Braginskii, L. S. and Entin, M. V. and Mikhailov, N. N.},
abstractNote = {The mobility and quantum time of Dirac electrons in HgTe quantum wells with near-critical thickness corresponding to the transition from the direct to inverted spectrum are experimentally and theoretically investigated. The nonmonotonic dependence of the mobility on the electron concentration is experimentally established. The theory of the scattering of Dirac electrons by impurities and irregularities of the well boundaries leading to well thickness fluctuations is constructed. The comparison of this theory with an experiment shows their good agreement and explains the observed nonmonotonic behavior by a decrease in the ratio between the de Broglie wavelength of Dirac electrons and the characteristic size of irregularities with increasing electron concentration. It is established that the transport time is larger than the quantum time by almost an order of magnitude in the case of the dominance of roughness scattering. The transition from macroscopic to mesoscopic samples is studied and an abrupt decrease in both the mobility and quantum time is observed. This behavior is attributed to the size effect on the free path length.},
doi = {10.1134/S1063782618110076},
journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 52,
place = {United States},
year = {2018},
month = {11}
}