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Title: Mechanism of the Generation of Donor–Acceptor Pairs in Heavily Doped n-ZrNiSn with the Ga Acceptor Impurity

Abstract

The nature of the mechanism of the simultaneous generation of donor–acceptor pairs under heavy doping of n-ZrNiSn intermetallic semiconductor with the Ga acceptor impurity is established. Such spatial arrangement in the crystal lattice of ZrNiSn{sub 1–x}Ga{sub x} is found when the rate of movement of the Fermi level εF found from calculations of the density distribution of electron states coincides with that experimentally established from dependences lnρ(1/T). It is shown that when the Ga impurity atom (4s{sup 2}4p{sup 1}) occupies the 4b sites of Sn atoms (5s{sup 2}5p{sup 2}), structural defects of both acceptor nature and donor nature in the form of vacancies in the 4b site are simultaneously generated. The results are discussed in the scope of the Shklovskii–Efros model of a heavily doped and compensated semiconductor.

Authors:
 [1];  [2];  [3];  [4]
  1. National Academy of Sciences of Ukraine, Ya. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics (Ukraine)
  2. Universität Wien, Institut für Physikalische Chemie (Austria)
  3. CNRS, Institut Néel (France)
  4. Polish Academy of Sciences, Trzebiatowski Institute of Low Temperature and Structure Research (Poland)
Publication Date:
OSTI Identifier:
22750050
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 3; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL LATTICES; DOPED MATERIALS; FERMI LEVEL; IMPURITIES; INTERMETALLIC COMPOUNDS; SEMICONDUCTOR MATERIALS

Citation Formats

Romaka, V. A., E-mail: vromaka@polynet.lviv.ua, Rogl, P. -F., Frushart, D., and Kaczorowski, D. Mechanism of the Generation of Donor–Acceptor Pairs in Heavily Doped n-ZrNiSn with the Ga Acceptor Impurity. United States: N. p., 2018. Web. doi:10.1134/S1063782618030193.
Romaka, V. A., E-mail: vromaka@polynet.lviv.ua, Rogl, P. -F., Frushart, D., & Kaczorowski, D. Mechanism of the Generation of Donor–Acceptor Pairs in Heavily Doped n-ZrNiSn with the Ga Acceptor Impurity. United States. doi:10.1134/S1063782618030193.
Romaka, V. A., E-mail: vromaka@polynet.lviv.ua, Rogl, P. -F., Frushart, D., and Kaczorowski, D. Thu . "Mechanism of the Generation of Donor–Acceptor Pairs in Heavily Doped n-ZrNiSn with the Ga Acceptor Impurity". United States. doi:10.1134/S1063782618030193.
@article{osti_22750050,
title = {Mechanism of the Generation of Donor–Acceptor Pairs in Heavily Doped n-ZrNiSn with the Ga Acceptor Impurity},
author = {Romaka, V. A., E-mail: vromaka@polynet.lviv.ua and Rogl, P. -F. and Frushart, D. and Kaczorowski, D.},
abstractNote = {The nature of the mechanism of the simultaneous generation of donor–acceptor pairs under heavy doping of n-ZrNiSn intermetallic semiconductor with the Ga acceptor impurity is established. Such spatial arrangement in the crystal lattice of ZrNiSn{sub 1–x}Ga{sub x} is found when the rate of movement of the Fermi level εF found from calculations of the density distribution of electron states coincides with that experimentally established from dependences lnρ(1/T). It is shown that when the Ga impurity atom (4s{sup 2}4p{sup 1}) occupies the 4b sites of Sn atoms (5s{sup 2}5p{sup 2}), structural defects of both acceptor nature and donor nature in the form of vacancies in the 4b site are simultaneously generated. The results are discussed in the scope of the Shklovskii–Efros model of a heavily doped and compensated semiconductor.},
doi = {10.1134/S1063782618030193},
journal = {Semiconductors},
issn = {1063-7826},
number = 3,
volume = 52,
place = {United States},
year = {2018},
month = {3}
}