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Title: Deep Radiation-Induced Defect Centers Created by a Fast Neutron Flux in CdZnTe Single Crystals

Abstract

The effect of a fast neutron flux (Φ = 10{sup 14}–10{sup 15} cm{sup –2}) on the electrical and photoluminescence properties of p-CdZnTe single crystals is studied. Isothermal annealing is performed (T = 400–500 K), and the activation energy of the dissociation of radiation-induced defects is determined at E{sub D} ≈ 0.75 eV.

Authors:
;  [1]
  1. National Academy of Sciences of Ukraine, Lashkarev Institute of Semiconductor Physics (Ukraine)
Publication Date:
OSTI Identifier:
22750049
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 3; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; CDZNTE SEMICONDUCTOR DETECTORS; DEFECTS; FAST NEUTRONS; MONOCRYSTALS; NEUTRON FLUX

Citation Formats

Plyatsko, S. V., E-mail: plyatsko@isp.kiev.ua, and Rashkovetskyi, L. V., E-mail: rashlv@ukr.net. Deep Radiation-Induced Defect Centers Created by a Fast Neutron Flux in CdZnTe Single Crystals. United States: N. p., 2018. Web. doi:10.1134/S1063782618030181.
Plyatsko, S. V., E-mail: plyatsko@isp.kiev.ua, & Rashkovetskyi, L. V., E-mail: rashlv@ukr.net. Deep Radiation-Induced Defect Centers Created by a Fast Neutron Flux in CdZnTe Single Crystals. United States. doi:10.1134/S1063782618030181.
Plyatsko, S. V., E-mail: plyatsko@isp.kiev.ua, and Rashkovetskyi, L. V., E-mail: rashlv@ukr.net. Thu . "Deep Radiation-Induced Defect Centers Created by a Fast Neutron Flux in CdZnTe Single Crystals". United States. doi:10.1134/S1063782618030181.
@article{osti_22750049,
title = {Deep Radiation-Induced Defect Centers Created by a Fast Neutron Flux in CdZnTe Single Crystals},
author = {Plyatsko, S. V., E-mail: plyatsko@isp.kiev.ua and Rashkovetskyi, L. V., E-mail: rashlv@ukr.net},
abstractNote = {The effect of a fast neutron flux (Φ = 10{sup 14}–10{sup 15} cm{sup –2}) on the electrical and photoluminescence properties of p-CdZnTe single crystals is studied. Isothermal annealing is performed (T = 400–500 K), and the activation energy of the dissociation of radiation-induced defects is determined at E{sub D} ≈ 0.75 eV.},
doi = {10.1134/S1063782618030181},
journal = {Semiconductors},
issn = {1063-7826},
number = 3,
volume = 52,
place = {United States},
year = {2018},
month = {3}
}