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Title: Formation of Radiation Defects by Proton Braking in Lightly Doped n- and p-SiC Layers

Abstract

Mathematical simulation of the cascade of displacements in SiC is used to consider the specific features of Frenkel-pair generation upon the scattering of 8- and 15-MeV protons. The distribution histograms of energies acquired not only by primary knocked-out atoms, but also by recoil atoms generated in displacement cascades, are calculated. An analysis of the histograms considers two energy ranges. In the first range of “low” energies, the spontaneous recombination of genetically related Frenkel pairs is dominant. Recoil atoms in the second range have a higher energy, which enables these atoms to leave the spontaneousrecombination zone and dissociate into isolated components. The compensation of lightly doped n- and p-4H-SiC samples grown by gas-phase epitaxy is experimentally studied under irradiation with 8- and 15-MeV protons. The carrier removal rates are measured. The calculated and experimental data are compared and estimates are obtained for the size of the spontaneous-recombination zone.

Authors:
; ;  [1];  [2]
  1. Peter the Great St. Petersburg Polytechnic University (Russian Federation)
  2. Ioffe Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22750048
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 3; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMS; DOPED MATERIALS; PROTONS; SILICON CARBIDES

Citation Formats

Kozlovski, V. V., E-mail: kozlovski@physics.spbstu.ru, Vasil’ev, A. E., Karaseov, P. A., and Lebedev, A. A. Formation of Radiation Defects by Proton Braking in Lightly Doped n- and p-SiC Layers. United States: N. p., 2018. Web. doi:10.1134/S1063782618030132.
Kozlovski, V. V., E-mail: kozlovski@physics.spbstu.ru, Vasil’ev, A. E., Karaseov, P. A., & Lebedev, A. A. Formation of Radiation Defects by Proton Braking in Lightly Doped n- and p-SiC Layers. United States. doi:10.1134/S1063782618030132.
Kozlovski, V. V., E-mail: kozlovski@physics.spbstu.ru, Vasil’ev, A. E., Karaseov, P. A., and Lebedev, A. A. Thu . "Formation of Radiation Defects by Proton Braking in Lightly Doped n- and p-SiC Layers". United States. doi:10.1134/S1063782618030132.
@article{osti_22750048,
title = {Formation of Radiation Defects by Proton Braking in Lightly Doped n- and p-SiC Layers},
author = {Kozlovski, V. V., E-mail: kozlovski@physics.spbstu.ru and Vasil’ev, A. E. and Karaseov, P. A. and Lebedev, A. A.},
abstractNote = {Mathematical simulation of the cascade of displacements in SiC is used to consider the specific features of Frenkel-pair generation upon the scattering of 8- and 15-MeV protons. The distribution histograms of energies acquired not only by primary knocked-out atoms, but also by recoil atoms generated in displacement cascades, are calculated. An analysis of the histograms considers two energy ranges. In the first range of “low” energies, the spontaneous recombination of genetically related Frenkel pairs is dominant. Recoil atoms in the second range have a higher energy, which enables these atoms to leave the spontaneousrecombination zone and dissociate into isolated components. The compensation of lightly doped n- and p-4H-SiC samples grown by gas-phase epitaxy is experimentally studied under irradiation with 8- and 15-MeV protons. The carrier removal rates are measured. The calculated and experimental data are compared and estimates are obtained for the size of the spontaneous-recombination zone.},
doi = {10.1134/S1063782618030132},
journal = {Semiconductors},
issn = {1063-7826},
number = 3,
volume = 52,
place = {United States},
year = {2018},
month = {3}
}