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Title: Specific Features of the Optical Characteristics of Porous Silicon and Their Modification by Chemical Treatment of the Surface

Abstract

Comparative studies of the specific features of the composition and photoluminescence properties of porous silicon with different morphologies are carried out by infrared and photoluminescence spectroscopy. On the basis of the experimental data and commonly accepted theoretical models, the main factors that influence the photoluminescence intensity and its deterioration upon the exposure of porous silicon to directed radiation in the visible region are established. By the example of porous silicon with 50–100 nm pores, the possibility of improving the above characteristics by chemical treatment in polyacrylic acid is shown.

Authors:
 [1]
  1. Voronezh State University (Russian Federation)
Publication Date:
OSTI Identifier:
22750045
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 3; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; PHOTOLUMINESCENCE; POROUS MATERIALS; SILICON

Citation Formats

Lenshin, A. S., E-mail: lenshin@phys.vsu.ru. Specific Features of the Optical Characteristics of Porous Silicon and Their Modification by Chemical Treatment of the Surface. United States: N. p., 2018. Web. doi:10.1134/S1063782618030156.
Lenshin, A. S., E-mail: lenshin@phys.vsu.ru. Specific Features of the Optical Characteristics of Porous Silicon and Their Modification by Chemical Treatment of the Surface. United States. doi:10.1134/S1063782618030156.
Lenshin, A. S., E-mail: lenshin@phys.vsu.ru. Thu . "Specific Features of the Optical Characteristics of Porous Silicon and Their Modification by Chemical Treatment of the Surface". United States. doi:10.1134/S1063782618030156.
@article{osti_22750045,
title = {Specific Features of the Optical Characteristics of Porous Silicon and Their Modification by Chemical Treatment of the Surface},
author = {Lenshin, A. S., E-mail: lenshin@phys.vsu.ru},
abstractNote = {Comparative studies of the specific features of the composition and photoluminescence properties of porous silicon with different morphologies are carried out by infrared and photoluminescence spectroscopy. On the basis of the experimental data and commonly accepted theoretical models, the main factors that influence the photoluminescence intensity and its deterioration upon the exposure of porous silicon to directed radiation in the visible region are established. By the example of porous silicon with 50–100 nm pores, the possibility of improving the above characteristics by chemical treatment in polyacrylic acid is shown.},
doi = {10.1134/S1063782618030156},
journal = {Semiconductors},
issn = {1063-7826},
number = 3,
volume = 52,
place = {United States},
year = {2018},
month = {3}
}