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Title: Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon

Abstract

The possibility of modifying the photoluminescence properties of porous silicon by irradiation with low doses of γ photons from a {sup 226}Ra radioisotope source and bremsstrahlung is demonstrated. The position of the longest photoluminescence wavelength tends to shift to the short-wavelength region of the spectrum. The emission efficiency increases upon irradiation of both the substrate and the layer formed.

Authors:
; ; ; ; ; ; ; ;  [1]
  1. Saratov State University (Russian Federation)
Publication Date:
OSTI Identifier:
22750044
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 3; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; OPTICAL PROPERTIES; POROUS MATERIALS; RADIATION DOSES; RADIUM 226; SILICON

Citation Formats

Bilenko, D. I., Belobrovaya, O. Ya., Terin, D. V., E-mail: lab32@mail.ru, Galushka, V. V., Galushka, I. V., Zharkova, E. A., Polyanskaya, V. P., Sidorov, V. I., and Yagudin, I. T. Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon. United States: N. p., 2018. Web. doi:10.1134/S1063782618030077.
Bilenko, D. I., Belobrovaya, O. Ya., Terin, D. V., E-mail: lab32@mail.ru, Galushka, V. V., Galushka, I. V., Zharkova, E. A., Polyanskaya, V. P., Sidorov, V. I., & Yagudin, I. T. Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon. United States. doi:10.1134/S1063782618030077.
Bilenko, D. I., Belobrovaya, O. Ya., Terin, D. V., E-mail: lab32@mail.ru, Galushka, V. V., Galushka, I. V., Zharkova, E. A., Polyanskaya, V. P., Sidorov, V. I., and Yagudin, I. T. Thu . "Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon". United States. doi:10.1134/S1063782618030077.
@article{osti_22750044,
title = {Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon},
author = {Bilenko, D. I. and Belobrovaya, O. Ya. and Terin, D. V., E-mail: lab32@mail.ru and Galushka, V. V. and Galushka, I. V. and Zharkova, E. A. and Polyanskaya, V. P. and Sidorov, V. I. and Yagudin, I. T.},
abstractNote = {The possibility of modifying the photoluminescence properties of porous silicon by irradiation with low doses of γ photons from a {sup 226}Ra radioisotope source and bremsstrahlung is demonstrated. The position of the longest photoluminescence wavelength tends to shift to the short-wavelength region of the spectrum. The emission efficiency increases upon irradiation of both the substrate and the layer formed.},
doi = {10.1134/S1063782618030077},
journal = {Semiconductors},
issn = {1063-7826},
number = 3,
volume = 52,
place = {United States},
year = {2018},
month = {3}
}