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Title: Electron–Electron and Electron–Phonon Interactions in Graphene on a Semiconductor Substrate: Simple Estimations

Abstract

The problem of epitaxial graphene formed on a semiconductor substrate is considered in the context of the extended Hubbard and Holstein–Hubbard models for electron–electron and electron–phonon interactions. The Haldane–Anderson model is chosen for the density of states of the substrate. Three regions of the phase diagram, specifically, spin- and charge-density waves and a spin- and charge-homogeneous paramagnetic state are considered. For a number of special cases used as examples, the similarities and differences of the electron states of graphene on semiconductor and metal substrates are demonstrated. It is shown that the main difference arises, if the Dirac point of graphene lies within the band gap of the semiconductor. Numerical estimations are performed for a SiC substrate.

Authors:
 [1]
  1. Ioffe Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22750043
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 3; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHARGE DENSITY; DENSITY OF STATES; GRAPHENE; INTERACTIONS; PHASE DIAGRAMS; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; SUBSTRATES

Citation Formats

Davydov, S. Yu., E-mail: Sergei-Davydov@mail.ru. Electron–Electron and Electron–Phonon Interactions in Graphene on a Semiconductor Substrate: Simple Estimations. United States: N. p., 2018. Web. doi:10.1134/S1063782618030090.
Davydov, S. Yu., E-mail: Sergei-Davydov@mail.ru. Electron–Electron and Electron–Phonon Interactions in Graphene on a Semiconductor Substrate: Simple Estimations. United States. doi:10.1134/S1063782618030090.
Davydov, S. Yu., E-mail: Sergei-Davydov@mail.ru. Thu . "Electron–Electron and Electron–Phonon Interactions in Graphene on a Semiconductor Substrate: Simple Estimations". United States. doi:10.1134/S1063782618030090.
@article{osti_22750043,
title = {Electron–Electron and Electron–Phonon Interactions in Graphene on a Semiconductor Substrate: Simple Estimations},
author = {Davydov, S. Yu., E-mail: Sergei-Davydov@mail.ru},
abstractNote = {The problem of epitaxial graphene formed on a semiconductor substrate is considered in the context of the extended Hubbard and Holstein–Hubbard models for electron–electron and electron–phonon interactions. The Haldane–Anderson model is chosen for the density of states of the substrate. Three regions of the phase diagram, specifically, spin- and charge-density waves and a spin- and charge-homogeneous paramagnetic state are considered. For a number of special cases used as examples, the similarities and differences of the electron states of graphene on semiconductor and metal substrates are demonstrated. It is shown that the main difference arises, if the Dirac point of graphene lies within the band gap of the semiconductor. Numerical estimations are performed for a SiC substrate.},
doi = {10.1134/S1063782618030090},
journal = {Semiconductors},
issn = {1063-7826},
number = 3,
volume = 52,
place = {United States},
year = {2018},
month = {3}
}