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Title: Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model

Abstract

A modified Schottky-barrier model, which is nonlinear in terms of the surface-state concentration and contains a local quasi-Fermi level at the interface induced by excess surface charge, is proposed. Such an approach makes it possible to explain the observed similarity of the I–V characteristics of diodes with the Schottky barrier M/(SiC){sub 1–x}(AlN){sub x} and those of heterojunctions based on SiC and its solid solutions taking into account Φ{sub g} ≈ Φ{sub B}. The results of calculations of the Schottky-barrier heights are consistent with the experimental data obtained from measurements of the photocurrent for metals (M): Al, Ti, Cr, and Ni. The I–V characteristics in the composite–additive model of charge transport agree with the experimental data for the n-M/p-(SiC){sub 1–x}(AlN){sub x} and n-6H-SiC/p-(SiC){sub 0.85}(AlN){sub 0.15} systems.

Authors:
;  [1];  [2]; ;  [1];  [3]
  1. North-Caucasian Federal University (Russian Federation)
  2. Moscow Institute of Radioelectronics and Automation (Russian Federation)
  3. Pyatigorsk Medical and Pharmaceutical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22750042
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 3; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; CHARGE TRANSPORT; NONLINEAR PROBLEMS; SILICON CARBIDES; SOLID SOLUTIONS

Citation Formats

Altukhov, V. I., E-mail: altukhov@mail.ru, Sankin, A. V., Sigov, A. S., Sysoev, D. K., Yanukyan, E. G., and Filippova, S. V. Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model. United States: N. p., 2018. Web. doi:10.1134/S106378261803003X.
Altukhov, V. I., E-mail: altukhov@mail.ru, Sankin, A. V., Sigov, A. S., Sysoev, D. K., Yanukyan, E. G., & Filippova, S. V. Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model. United States. doi:10.1134/S106378261803003X.
Altukhov, V. I., E-mail: altukhov@mail.ru, Sankin, A. V., Sigov, A. S., Sysoev, D. K., Yanukyan, E. G., and Filippova, S. V. Thu . "Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model". United States. doi:10.1134/S106378261803003X.
@article{osti_22750042,
title = {Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model},
author = {Altukhov, V. I., E-mail: altukhov@mail.ru and Sankin, A. V. and Sigov, A. S. and Sysoev, D. K. and Yanukyan, E. G. and Filippova, S. V.},
abstractNote = {A modified Schottky-barrier model, which is nonlinear in terms of the surface-state concentration and contains a local quasi-Fermi level at the interface induced by excess surface charge, is proposed. Such an approach makes it possible to explain the observed similarity of the I–V characteristics of diodes with the Schottky barrier M/(SiC){sub 1–x}(AlN){sub x} and those of heterojunctions based on SiC and its solid solutions taking into account Φ{sub g} ≈ Φ{sub B}. The results of calculations of the Schottky-barrier heights are consistent with the experimental data obtained from measurements of the photocurrent for metals (M): Al, Ti, Cr, and Ni. The I–V characteristics in the composite–additive model of charge transport agree with the experimental data for the n-M/p-(SiC){sub 1–x}(AlN){sub x} and n-6H-SiC/p-(SiC){sub 0.85}(AlN){sub 0.15} systems.},
doi = {10.1134/S106378261803003X},
journal = {Semiconductors},
issn = {1063-7826},
number = 3,
volume = 52,
place = {United States},
year = {2018},
month = {3}
}