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Title: Field-Effect Transistor Based on the Proton Conductivity of Graphene Oxide and Nafion Films

Abstract

Proton conductivity in graphene oxide and Nafion films depending on humidity and voltages across electrodes is studied in the model of a field-effect transistor. The electrical characteristics of the films are similar to one another, but the mobility of positive charges in Nafion and the current gain are higher by 2–3 orders of magnitude compared with graphene oxide. The negative ion current in graphene-oxide films at positive bias voltage is significant compared with the proton current (up to ~10%), while it is almost lacking in Nafion films (<1%).

Authors:
 [1];  [2]; ;  [1]
  1. Russian Academy of Sciences, Institute of Problems of Chemical Physics (Russian Federation)
  2. Russian Academy of Sciences, Institute of Microelectronics Technology and High Purity Materials (Russian Federation)
Publication Date:
OSTI Identifier:
22750041
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 3; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; FIELD EFFECT TRANSISTORS; FILMS; GRAPHENE; OXIDATION; OXIDES; PROTON CONDUCTIVITY

Citation Formats

Smirnov, V. A., E-mail: vas@icp.ac.ru, Mokrushin, A. D., Denisov, N. N., and Dobrovolskii, Yu. A. Field-Effect Transistor Based on the Proton Conductivity of Graphene Oxide and Nafion Films. United States: N. p., 2018. Web. doi:10.1134/S106378261803020X.
Smirnov, V. A., E-mail: vas@icp.ac.ru, Mokrushin, A. D., Denisov, N. N., & Dobrovolskii, Yu. A. Field-Effect Transistor Based on the Proton Conductivity of Graphene Oxide and Nafion Films. United States. doi:10.1134/S106378261803020X.
Smirnov, V. A., E-mail: vas@icp.ac.ru, Mokrushin, A. D., Denisov, N. N., and Dobrovolskii, Yu. A. Thu . "Field-Effect Transistor Based on the Proton Conductivity of Graphene Oxide and Nafion Films". United States. doi:10.1134/S106378261803020X.
@article{osti_22750041,
title = {Field-Effect Transistor Based on the Proton Conductivity of Graphene Oxide and Nafion Films},
author = {Smirnov, V. A., E-mail: vas@icp.ac.ru and Mokrushin, A. D. and Denisov, N. N. and Dobrovolskii, Yu. A.},
abstractNote = {Proton conductivity in graphene oxide and Nafion films depending on humidity and voltages across electrodes is studied in the model of a field-effect transistor. The electrical characteristics of the films are similar to one another, but the mobility of positive charges in Nafion and the current gain are higher by 2–3 orders of magnitude compared with graphene oxide. The negative ion current in graphene-oxide films at positive bias voltage is significant compared with the proton current (up to ~10%), while it is almost lacking in Nafion films (<1%).},
doi = {10.1134/S106378261803020X},
journal = {Semiconductors},
issn = {1063-7826},
number = 3,
volume = 52,
place = {United States},
year = {2018},
month = {3}
}