Mechanism and Behavior of the Light Flux Decrease in Light-Emitting Diodes Based on AlGaN/InGaN/GaN Structures with Quantum Wells upon Prolonged Direct-Current Flow of Various Densities

Journal Article · Thu Mar 15 00:00:00 EDT 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618030168· OSTI ID:22750040

Manyakhin, F. I., E-mail: [e-mail] ^[1]

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1. National University of Science and Technology “MISiS” (Russian Federation)

The mechanism of the light-flux decrease in light-emitting diodes based on AlGaN/InGaN/GaN heterostructures with quantum holes is determined. The light-flux decrease is associated with point-defect generation in the heterostructure active region due to interaction of the semiconductor lattice with hot carriers formed in the mode of deviation of the current–voltage characteristic from the exponential one. An analytical expression for the light-flux decrease upon prolonged current flow, which is confirmed by experimental results, is derived. It is shown that the behavior of the dependence of the light flux on the lifetime is strongly affected by the nonuniform distribution of indium in quantum wells.

• OSTI ID: 22750040
• Journal Information: Semiconductors, Vol. 52, Issue 3; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DIRECT CURRENT
GALLIUM NITRIDES
LIGHT EMITTING DIODES
POINT DEFECTS
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
VISIBLE RADIATION