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Title: Mechanism and Behavior of the Light Flux Decrease in Light-Emitting Diodes Based on AlGaN/InGaN/GaN Structures with Quantum Wells upon Prolonged Direct-Current Flow of Various Densities

Abstract

The mechanism of the light-flux decrease in light-emitting diodes based on AlGaN/InGaN/GaN heterostructures with quantum holes is determined. The light-flux decrease is associated with point-defect generation in the heterostructure active region due to interaction of the semiconductor lattice with hot carriers formed in the mode of deviation of the current–voltage characteristic from the exponential one. An analytical expression for the light-flux decrease upon prolonged current flow, which is confirmed by experimental results, is derived. It is shown that the behavior of the dependence of the light flux on the lifetime is strongly affected by the nonuniform distribution of indium in quantum wells.

Authors:
 [1]
  1. National University of Science and Technology “MISiS” (Russian Federation)
Publication Date:
OSTI Identifier:
22750040
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 3; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DIRECT CURRENT; GALLIUM NITRIDES; LIGHT EMITTING DIODES; POINT DEFECTS; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; VISIBLE RADIATION

Citation Formats

Manyakhin, F. I., E-mail: zaomisis@yandex.ru. Mechanism and Behavior of the Light Flux Decrease in Light-Emitting Diodes Based on AlGaN/InGaN/GaN Structures with Quantum Wells upon Prolonged Direct-Current Flow of Various Densities. United States: N. p., 2018. Web. doi:10.1134/S1063782618030168.
Manyakhin, F. I., E-mail: zaomisis@yandex.ru. Mechanism and Behavior of the Light Flux Decrease in Light-Emitting Diodes Based on AlGaN/InGaN/GaN Structures with Quantum Wells upon Prolonged Direct-Current Flow of Various Densities. United States. doi:10.1134/S1063782618030168.
Manyakhin, F. I., E-mail: zaomisis@yandex.ru. Thu . "Mechanism and Behavior of the Light Flux Decrease in Light-Emitting Diodes Based on AlGaN/InGaN/GaN Structures with Quantum Wells upon Prolonged Direct-Current Flow of Various Densities". United States. doi:10.1134/S1063782618030168.
@article{osti_22750040,
title = {Mechanism and Behavior of the Light Flux Decrease in Light-Emitting Diodes Based on AlGaN/InGaN/GaN Structures with Quantum Wells upon Prolonged Direct-Current Flow of Various Densities},
author = {Manyakhin, F. I., E-mail: zaomisis@yandex.ru},
abstractNote = {The mechanism of the light-flux decrease in light-emitting diodes based on AlGaN/InGaN/GaN heterostructures with quantum holes is determined. The light-flux decrease is associated with point-defect generation in the heterostructure active region due to interaction of the semiconductor lattice with hot carriers formed in the mode of deviation of the current–voltage characteristic from the exponential one. An analytical expression for the light-flux decrease upon prolonged current flow, which is confirmed by experimental results, is derived. It is shown that the behavior of the dependence of the light flux on the lifetime is strongly affected by the nonuniform distribution of indium in quantum wells.},
doi = {10.1134/S1063782618030168},
journal = {Semiconductors},
issn = {1063-7826},
number = 3,
volume = 52,
place = {United States},
year = {2018},
month = {3}
}