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Title: Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE

Abstract

Laser-power converters for the wavelength λ = 808 nm are fabricated by liquid-phase epitaxy (LPE) on the basis of n-Al{sub 0.07}GaAs–p-Al{sub 0.07}GaAs–p-Al{sub 0.25}GaAs single-junction heterostructures. The converters are tested with uniform (pulse simulator) and partly nonuniform (laser beam) illumination distribution over the photoreceiving surface. In the former case, a monochromatic efficiency of η = 53.1% is achieved for samples with an area of S = 4 cm{sup 2} at a power of 1.2 W. At S = 10.2 mm{sup 2} the efficiency is 58.3% at a laser power of 0.7 W.

Authors:
; ; ; ; ;  [1]
  1. Ioffe Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22750039
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 3; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; LIQUID PHASE EPITAXY; MONOCHROMATIC RADIATION; PHOTOVOLTAIC EFFECT; SOLAR CELLS

Citation Formats

Khvostikov, V. P., E-mail: vlkh@scell.ioffe.ru, Sorokina, S. V., Potapovich, N. S., Khvostikova, O. A., Timoshina, N. Kh., and Shvarts, M. Z. Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE. United States: N. p., 2018. Web. doi:10.1134/S1063782618030120.
Khvostikov, V. P., E-mail: vlkh@scell.ioffe.ru, Sorokina, S. V., Potapovich, N. S., Khvostikova, O. A., Timoshina, N. Kh., & Shvarts, M. Z. Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE. United States. doi:10.1134/S1063782618030120.
Khvostikov, V. P., E-mail: vlkh@scell.ioffe.ru, Sorokina, S. V., Potapovich, N. S., Khvostikova, O. A., Timoshina, N. Kh., and Shvarts, M. Z. Thu . "Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE". United States. doi:10.1134/S1063782618030120.
@article{osti_22750039,
title = {Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE},
author = {Khvostikov, V. P., E-mail: vlkh@scell.ioffe.ru and Sorokina, S. V. and Potapovich, N. S. and Khvostikova, O. A. and Timoshina, N. Kh. and Shvarts, M. Z.},
abstractNote = {Laser-power converters for the wavelength λ = 808 nm are fabricated by liquid-phase epitaxy (LPE) on the basis of n-Al{sub 0.07}GaAs–p-Al{sub 0.07}GaAs–p-Al{sub 0.25}GaAs single-junction heterostructures. The converters are tested with uniform (pulse simulator) and partly nonuniform (laser beam) illumination distribution over the photoreceiving surface. In the former case, a monochromatic efficiency of η = 53.1% is achieved for samples with an area of S = 4 cm{sup 2} at a power of 1.2 W. At S = 10.2 mm{sup 2} the efficiency is 58.3% at a laser power of 0.7 W.},
doi = {10.1134/S1063782618030120},
journal = {Semiconductors},
issn = {1063-7826},
number = 3,
volume = 52,
place = {United States},
year = {2018},
month = {3}
}