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Title: Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures

Abstract

The electrical properties and photoluminescence features of uniformly Si-doped GaAs layers grown on GaAs substrates with the (100) and (111)A crystallographic orientations of the surface are studied. The samples are grown at the same As{sub 4} pressure in the growth temperature range from 350 to 510°C. The samples grown on GaAs(100) substrates possess n-type conductivity in the entire growth temperature range, and the samples grown on GaAs(111)A substrates possess p-type conductivity in the growth temperature range from 430 to 510°C. The photoluminescence spectra of the samples exhibit an edge band and an impurity band. The edge photoluminescence band corresponds to the photoluminescence of degenerate GaAs with n- and p-type conductivity. The impurity photoluminescence band for samples on GaAs(100) substrates in the range 1.30–1.45 eV is attributed to V{sub As} defects and Si{sub As}–V{sub As} defect complexes, whose concentration varies with sample growth temperature. Transformation of the impurity photoluminescence spectra of the samples on GaAs(111)A substrates is interpreted as being a result of changes in the V{sub As} and V{sub Ga} defect concentrations under variations in the growth temperature of the samples.

Authors:
; ; ; ;  [1]
  1. Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation)
Publication Date:
OSTI Identifier:
22750038
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 3; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; DEFECTS; DOPED MATERIALS; ELECTRICAL PROPERTIES; ELECTRONIC STRUCTURE; GALLIUM ARSENIDES; IMPURITIES; PHOTOLUMINESCENCE; SUBSTRATES; TEMPERATURE RANGE

Citation Formats

Galiev, G. B., E-mail: galiev-galib@mail.ru, Klimov, E. A., Klochkov, A. N., Pushkarev, S. S., and Maltsev, P. P. Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures. United States: N. p., 2018. Web. doi:10.1134/S1063782618030119.
Galiev, G. B., E-mail: galiev-galib@mail.ru, Klimov, E. A., Klochkov, A. N., Pushkarev, S. S., & Maltsev, P. P. Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures. United States. doi:10.1134/S1063782618030119.
Galiev, G. B., E-mail: galiev-galib@mail.ru, Klimov, E. A., Klochkov, A. N., Pushkarev, S. S., and Maltsev, P. P. Thu . "Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures". United States. doi:10.1134/S1063782618030119.
@article{osti_22750038,
title = {Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures},
author = {Galiev, G. B., E-mail: galiev-galib@mail.ru and Klimov, E. A. and Klochkov, A. N. and Pushkarev, S. S. and Maltsev, P. P.},
abstractNote = {The electrical properties and photoluminescence features of uniformly Si-doped GaAs layers grown on GaAs substrates with the (100) and (111)A crystallographic orientations of the surface are studied. The samples are grown at the same As{sub 4} pressure in the growth temperature range from 350 to 510°C. The samples grown on GaAs(100) substrates possess n-type conductivity in the entire growth temperature range, and the samples grown on GaAs(111)A substrates possess p-type conductivity in the growth temperature range from 430 to 510°C. The photoluminescence spectra of the samples exhibit an edge band and an impurity band. The edge photoluminescence band corresponds to the photoluminescence of degenerate GaAs with n- and p-type conductivity. The impurity photoluminescence band for samples on GaAs(100) substrates in the range 1.30–1.45 eV is attributed to V{sub As} defects and Si{sub As}–V{sub As} defect complexes, whose concentration varies with sample growth temperature. Transformation of the impurity photoluminescence spectra of the samples on GaAs(111)A substrates is interpreted as being a result of changes in the V{sub As} and V{sub Ga} defect concentrations under variations in the growth temperature of the samples.},
doi = {10.1134/S1063782618030119},
journal = {Semiconductors},
issn = {1063-7826},
number = 3,
volume = 52,
place = {United States},
year = {2018},
month = {3}
}