Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures
- Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation)
The electrical properties and photoluminescence features of uniformly Si-doped GaAs layers grown on GaAs substrates with the (100) and (111)A crystallographic orientations of the surface are studied. The samples are grown at the same As{sub 4} pressure in the growth temperature range from 350 to 510°C. The samples grown on GaAs(100) substrates possess n-type conductivity in the entire growth temperature range, and the samples grown on GaAs(111)A substrates possess p-type conductivity in the growth temperature range from 430 to 510°C. The photoluminescence spectra of the samples exhibit an edge band and an impurity band. The edge photoluminescence band corresponds to the photoluminescence of degenerate GaAs with n- and p-type conductivity. The impurity photoluminescence band for samples on GaAs(100) substrates in the range 1.30–1.45 eV is attributed to V{sub As} defects and Si{sub As}–V{sub As} defect complexes, whose concentration varies with sample growth temperature. Transformation of the impurity photoluminescence spectra of the samples on GaAs(111)A substrates is interpreted as being a result of changes in the V{sub As} and V{sub Ga} defect concentrations under variations in the growth temperature of the samples.
- OSTI ID:
- 22750038
- Journal Information:
- Semiconductors, Vol. 52, Issue 3; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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