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Title: Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands

Abstract

The transition from a two-domain to one-domain surface on a Si(100) substrate is investigated. It is demonstrated using reflection high-energy electron diffraction that at a temperature of 600°C and a deposition rate of 0.652 Å/s onto a Si(100) substrate pre-heated to 1000°C and inclined at an angle of 0.35°C to the plane, a series of reflections from the 1 × 2 superstructure completely vanishes at a constant flow of Si. This is attributed to the transition of the surface from monoatomic to diatomic steps. At growth rates lower than 0.652 Å/s, the transition from a two-domain to one-domain surface is also observed; with a decrease in the growth rate, the intensity ratio I{sub 2×1}/I{sub 1×2} decreases and the maximum of the dependences shifts toward lower temperatures. The complete vanishing of the series of superstructural reflections after preliminary annealing at a temperature of 700°C is not observed; this series only vanishes after annealing at 900 and 1000°C. The growth of Ge islands on a Si(100) surface preliminary annealed at a temperature of 800°C is studied. It is shown that the islands tend to nucleate at the step edges. A mechanism of Ge island ordering on the Si(100) surface is proposed.

Authors:
; ; ; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Siberian Branch, Rzhanov Institute of Semiconductor Physics (Russian Federation)
Publication Date:
OSTI Identifier:
22750036
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 3; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CRYSTAL GROWTH; ELECTRON DIFFRACTION; GERMANIUM; ISLANDS; NANOSTRUCTURES; REFLECTION

Citation Formats

Esin, M. Yu., E-mail: yesinm@isp.nsc.ru, Nikiforov, A. I., Timofeev, V. A., Tuktamyshev, A. R., Mashanov, V. I., Loshkarev, I. D., Deryabin, A. S., and Pchelyakov, O. P. Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands. United States: N. p., 2018. Web. doi:10.1134/S1063782618030107.
Esin, M. Yu., E-mail: yesinm@isp.nsc.ru, Nikiforov, A. I., Timofeev, V. A., Tuktamyshev, A. R., Mashanov, V. I., Loshkarev, I. D., Deryabin, A. S., & Pchelyakov, O. P. Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands. United States. doi:10.1134/S1063782618030107.
Esin, M. Yu., E-mail: yesinm@isp.nsc.ru, Nikiforov, A. I., Timofeev, V. A., Tuktamyshev, A. R., Mashanov, V. I., Loshkarev, I. D., Deryabin, A. S., and Pchelyakov, O. P. Thu . "Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands". United States. doi:10.1134/S1063782618030107.
@article{osti_22750036,
title = {Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands},
author = {Esin, M. Yu., E-mail: yesinm@isp.nsc.ru and Nikiforov, A. I. and Timofeev, V. A. and Tuktamyshev, A. R. and Mashanov, V. I. and Loshkarev, I. D. and Deryabin, A. S. and Pchelyakov, O. P.},
abstractNote = {The transition from a two-domain to one-domain surface on a Si(100) substrate is investigated. It is demonstrated using reflection high-energy electron diffraction that at a temperature of 600°C and a deposition rate of 0.652 Å/s onto a Si(100) substrate pre-heated to 1000°C and inclined at an angle of 0.35°C to the plane, a series of reflections from the 1 × 2 superstructure completely vanishes at a constant flow of Si. This is attributed to the transition of the surface from monoatomic to diatomic steps. At growth rates lower than 0.652 Å/s, the transition from a two-domain to one-domain surface is also observed; with a decrease in the growth rate, the intensity ratio I{sub 2×1}/I{sub 1×2} decreases and the maximum of the dependences shifts toward lower temperatures. The complete vanishing of the series of superstructural reflections after preliminary annealing at a temperature of 700°C is not observed; this series only vanishes after annealing at 900 and 1000°C. The growth of Ge islands on a Si(100) surface preliminary annealed at a temperature of 800°C is studied. It is shown that the islands tend to nucleate at the step edges. A mechanism of Ge island ordering on the Si(100) surface is proposed.},
doi = {10.1134/S1063782618030107},
journal = {Semiconductors},
issn = {1063-7826},
number = 3,
volume = 52,
place = {United States},
year = {2018},
month = {3}
}