skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Self-Consistent Simulation of GaAs/InGaAs/AlGaAs Heterostructures Photoluminescence Spectra and Its Application to pHEMT Structures Diagnostics

Abstract

We performed numerical self-consistent solution of Schrödinger and Poisson equations for GaAs/InGaAs/AlGaAs pHEMT structures with quantum well. Based on the results we calculated optical transition matrix elements and photoluminescence spectra of such structures with the same design and different parameters (such as doping level and epitaxial layers width). In the photoluminescence spectra calculations three fitting parameters have been used. These parameters are GaAs/InGaAs valence band offset in strained quantum well, hole quasi Fermi level and inhomogeneous broadening. The PL peaks amplitudes and positions dependencies on the structure parameters were established. These dependencies can be used as the basis for pHEMT structure non-destructive diagnostics.

Authors:
;  [1];  [2];  [1]
  1. St. Petersburg Electrotechnical University “LETI” (Russian Federation)
  2. JSC “Svetlana-Rost” (Russian Federation)
Publication Date:
OSTI Identifier:
22749996
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 4; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; DOPED MATERIALS; FERMI LEVEL; GALLIUM ARSENIDES; INDIUM ARSENIDES; MATRICES; MATRIX ELEMENTS; PHOTOLUMINESCENCE; POISSON EQUATION; SPECTRA

Citation Formats

Mironova, M. S., E-mail: mironova.m.s@gmail.com, Zubkov, V. I., Dudin, A. L., and Glinskii, G. F.. Self-Consistent Simulation of GaAs/InGaAs/AlGaAs Heterostructures Photoluminescence Spectra and Its Application to pHEMT Structures Diagnostics. United States: N. p., 2018. Web. doi:10.1134/S106378261804022X.
Mironova, M. S., E-mail: mironova.m.s@gmail.com, Zubkov, V. I., Dudin, A. L., & Glinskii, G. F.. Self-Consistent Simulation of GaAs/InGaAs/AlGaAs Heterostructures Photoluminescence Spectra and Its Application to pHEMT Structures Diagnostics. United States. doi:10.1134/S106378261804022X.
Mironova, M. S., E-mail: mironova.m.s@gmail.com, Zubkov, V. I., Dudin, A. L., and Glinskii, G. F.. Sun . "Self-Consistent Simulation of GaAs/InGaAs/AlGaAs Heterostructures Photoluminescence Spectra and Its Application to pHEMT Structures Diagnostics". United States. doi:10.1134/S106378261804022X.
@article{osti_22749996,
title = {Self-Consistent Simulation of GaAs/InGaAs/AlGaAs Heterostructures Photoluminescence Spectra and Its Application to pHEMT Structures Diagnostics},
author = {Mironova, M. S., E-mail: mironova.m.s@gmail.com and Zubkov, V. I. and Dudin, A. L. and Glinskii, G. F.},
abstractNote = {We performed numerical self-consistent solution of Schrödinger and Poisson equations for GaAs/InGaAs/AlGaAs pHEMT structures with quantum well. Based on the results we calculated optical transition matrix elements and photoluminescence spectra of such structures with the same design and different parameters (such as doping level and epitaxial layers width). In the photoluminescence spectra calculations three fitting parameters have been used. These parameters are GaAs/InGaAs valence band offset in strained quantum well, hole quasi Fermi level and inhomogeneous broadening. The PL peaks amplitudes and positions dependencies on the structure parameters were established. These dependencies can be used as the basis for pHEMT structure non-destructive diagnostics.},
doi = {10.1134/S106378261804022X},
journal = {Semiconductors},
issn = {1063-7826},
number = 4,
volume = 52,
place = {United States},
year = {2018},
month = {4}
}