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Title: Luminescence of ZnMnTe/ZnMgTe Heterostructures with Monolayer Manganese Inclusions in ZnTe Quantum Wells and Its Behavior in a Magnetic Field

Abstract

Light emission from ZnMnTe/ZnMgTe structures with the quantum wells ZnTe containing monolayer manganese inclusions and quantum wells Zn{sub 0.45}Mn{sub 0.15}Te were investigated under the different excitation conditions. The heavy-hole exciton σ{sup +} and σ{sup –} magnetic components show the unusual behavior concerning their energy shifts and intensities. It is possible to explain the Zeeman splitting of the heavy exciton emission band if the following factors are taken into account. Firstly, ZnMnTe/ZnMgTe quantum well structures are of the type II due to the strains as concerns to the electron and heavy hole. Secondly, the electron and hole magnetic sublevels population is far from equilibrium due to the fast energy transfer from the electron- hole system to the 3d-shells of magnetic ions.

Authors:
 [1]; ; ;  [2];  [3];  [4];  [5]
  1. St. Petersburg Academic University (Russian Federation)
  2. St. Petersburg State University (Russian Federation)
  3. Ioffe Institute (Russian Federation)
  4. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
  5. Polish Academy of Science, Institute of Physics (Poland)
Publication Date:
OSTI Identifier:
22749994
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 4; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ENERGY TRANSFER; IONS; MAGNETIC FIELDS; MAGNETIZATION; MANGANESE; QUANTUM WELLS; ZEEMAN EFFECT; ZINC TELLURIDES

Citation Formats

Shtrom, I. V., Agekyan, V. F., E-mail: v.agekyan@spbu.ru, Serov, A. Yu., Filosofov, N. G., Akhmadullin, R. R., Krizhkov, D. E., and Karczewski, G. Luminescence of ZnMnTe/ZnMgTe Heterostructures with Monolayer Manganese Inclusions in ZnTe Quantum Wells and Its Behavior in a Magnetic Field. United States: N. p., 2018. Web. doi:10.1134/S1063782618040267.
Shtrom, I. V., Agekyan, V. F., E-mail: v.agekyan@spbu.ru, Serov, A. Yu., Filosofov, N. G., Akhmadullin, R. R., Krizhkov, D. E., & Karczewski, G. Luminescence of ZnMnTe/ZnMgTe Heterostructures with Monolayer Manganese Inclusions in ZnTe Quantum Wells and Its Behavior in a Magnetic Field. United States. doi:10.1134/S1063782618040267.
Shtrom, I. V., Agekyan, V. F., E-mail: v.agekyan@spbu.ru, Serov, A. Yu., Filosofov, N. G., Akhmadullin, R. R., Krizhkov, D. E., and Karczewski, G. Sun . "Luminescence of ZnMnTe/ZnMgTe Heterostructures with Monolayer Manganese Inclusions in ZnTe Quantum Wells and Its Behavior in a Magnetic Field". United States. doi:10.1134/S1063782618040267.
@article{osti_22749994,
title = {Luminescence of ZnMnTe/ZnMgTe Heterostructures with Monolayer Manganese Inclusions in ZnTe Quantum Wells and Its Behavior in a Magnetic Field},
author = {Shtrom, I. V. and Agekyan, V. F., E-mail: v.agekyan@spbu.ru and Serov, A. Yu. and Filosofov, N. G. and Akhmadullin, R. R. and Krizhkov, D. E. and Karczewski, G.},
abstractNote = {Light emission from ZnMnTe/ZnMgTe structures with the quantum wells ZnTe containing monolayer manganese inclusions and quantum wells Zn{sub 0.45}Mn{sub 0.15}Te were investigated under the different excitation conditions. The heavy-hole exciton σ{sup +} and σ{sup –} magnetic components show the unusual behavior concerning their energy shifts and intensities. It is possible to explain the Zeeman splitting of the heavy exciton emission band if the following factors are taken into account. Firstly, ZnMnTe/ZnMgTe quantum well structures are of the type II due to the strains as concerns to the electron and heavy hole. Secondly, the electron and hole magnetic sublevels population is far from equilibrium due to the fast energy transfer from the electron- hole system to the 3d-shells of magnetic ions.},
doi = {10.1134/S1063782618040267},
journal = {Semiconductors},
issn = {1063-7826},
number = 4,
volume = 52,
place = {United States},
year = {2018},
month = {4}
}