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Title: Biexciton Binding Energy in Spherical Quantum Dots with Γ{sub 8} Valence Band

Abstract

The biexciton binding energy in spherical CdSe/ZnSe quantum dots is calculated variationally in the framework of kp-perturbation theory. Smooth and abrupt confining potentials with the same localization area of carriers are compared for two limiting cases of light hole to heavy hole mass ratio β = m{sub lh}/m{sub hh}: β = 1 and β = 0. Accounting for correlations between carriers results in their polarized configuration and significantly increases the biexciton binding energy in comparison with the first order perturbation theory. For β = 0 in smooth confining potentials there are three nearby biexciton states separated by small energy gap between 1S{sub 3/2} and 1P{sub 3/2} hole states.

Authors:
; ; ;  [1]
  1. Ioffe Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22749967
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 5; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; BINDING ENERGY; CADMIUM SELENIDES; ENERGY GAP; EXCITONS; PERTURBATION THEORY; QUANTUM DOTS; SPHERICAL CONFIGURATION; ZINC SELENIDES

Citation Formats

Golovatenko, A. A., E-mail: sasha.pti@mail.ioffe.ru, Semina, M. A., Rodina, A. V., and Shubina, T. V. Biexciton Binding Energy in Spherical Quantum Dots with Γ{sub 8} Valence Band. United States: N. p., 2018. Web. doi:10.1134/S106378261805010X.
Golovatenko, A. A., E-mail: sasha.pti@mail.ioffe.ru, Semina, M. A., Rodina, A. V., & Shubina, T. V. Biexciton Binding Energy in Spherical Quantum Dots with Γ{sub 8} Valence Band. United States. doi:10.1134/S106378261805010X.
Golovatenko, A. A., E-mail: sasha.pti@mail.ioffe.ru, Semina, M. A., Rodina, A. V., and Shubina, T. V. Tue . "Biexciton Binding Energy in Spherical Quantum Dots with Γ{sub 8} Valence Band". United States. doi:10.1134/S106378261805010X.
@article{osti_22749967,
title = {Biexciton Binding Energy in Spherical Quantum Dots with Γ{sub 8} Valence Band},
author = {Golovatenko, A. A., E-mail: sasha.pti@mail.ioffe.ru and Semina, M. A. and Rodina, A. V. and Shubina, T. V.},
abstractNote = {The biexciton binding energy in spherical CdSe/ZnSe quantum dots is calculated variationally in the framework of kp-perturbation theory. Smooth and abrupt confining potentials with the same localization area of carriers are compared for two limiting cases of light hole to heavy hole mass ratio β = m{sub lh}/m{sub hh}: β = 1 and β = 0. Accounting for correlations between carriers results in their polarized configuration and significantly increases the biexciton binding energy in comparison with the first order perturbation theory. For β = 0 in smooth confining potentials there are three nearby biexciton states separated by small energy gap between 1S{sub 3/2} and 1P{sub 3/2} hole states.},
doi = {10.1134/S106378261805010X},
journal = {Semiconductors},
issn = {1063-7826},
number = 5,
volume = 52,
place = {United States},
year = {2018},
month = {5}
}