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Title: Ballistic Hole Emission Spectroscopy of Self-Assembled GeSi/Si(001) Nanoislands

Abstract

Ballistic hole emission microscopy/spectroscopy has been applied to study the electronic structure of the hole states in the self-assembled GeSi/Si(001) nanoislands. The ballistic hole emission microscopic images demonstrated the spots of increased collector current related to the ballistic electron tunnelling via the confined valence band states in the GeSi/Si(001) nanoislands. In the ballistic hole emission spectra of the Ge hut clusters the stepwise features attributed to the quantum confined hole states have been observed. The results of present study demonstrate the capabilities of the ballistic hole emission microscopy/spectroscopy in the characterization of the electronic structures of the valence band states in the GeSi/Si nanostructures.

Authors:
; ; ; ;  [1]
  1. Lobachevskii State University of Nizhny Novgorod (Russian Federation)
Publication Date:
OSTI Identifier:
22749958
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 5; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRONIC STRUCTURE; EMISSION SPECTRA; EMISSION SPECTROSCOPY; GERMANIUM SILICIDES; TUNNEL EFFECT

Citation Formats

Filatov, D. O., E-mail: dmitry-filatov@inbox.ru, Guseinov, D. V., Chalkov, V. Yu., Denisov, S. A., and Shengurov, V. G. Ballistic Hole Emission Spectroscopy of Self-Assembled GeSi/Si(001) Nanoislands. United States: N. p., 2018. Web. doi:10.1134/S1063782618050068.
Filatov, D. O., E-mail: dmitry-filatov@inbox.ru, Guseinov, D. V., Chalkov, V. Yu., Denisov, S. A., & Shengurov, V. G. Ballistic Hole Emission Spectroscopy of Self-Assembled GeSi/Si(001) Nanoislands. United States. doi:10.1134/S1063782618050068.
Filatov, D. O., E-mail: dmitry-filatov@inbox.ru, Guseinov, D. V., Chalkov, V. Yu., Denisov, S. A., and Shengurov, V. G. Tue . "Ballistic Hole Emission Spectroscopy of Self-Assembled GeSi/Si(001) Nanoislands". United States. doi:10.1134/S1063782618050068.
@article{osti_22749958,
title = {Ballistic Hole Emission Spectroscopy of Self-Assembled GeSi/Si(001) Nanoislands},
author = {Filatov, D. O., E-mail: dmitry-filatov@inbox.ru and Guseinov, D. V. and Chalkov, V. Yu. and Denisov, S. A. and Shengurov, V. G.},
abstractNote = {Ballistic hole emission microscopy/spectroscopy has been applied to study the electronic structure of the hole states in the self-assembled GeSi/Si(001) nanoislands. The ballistic hole emission microscopic images demonstrated the spots of increased collector current related to the ballistic electron tunnelling via the confined valence band states in the GeSi/Si(001) nanoislands. In the ballistic hole emission spectra of the Ge hut clusters the stepwise features attributed to the quantum confined hole states have been observed. The results of present study demonstrate the capabilities of the ballistic hole emission microscopy/spectroscopy in the characterization of the electronic structures of the valence band states in the GeSi/Si nanostructures.},
doi = {10.1134/S1063782618050068},
journal = {Semiconductors},
issn = {1063-7826},
number = 5,
volume = 52,
place = {United States},
year = {2018},
month = {5}
}