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Title: The Features of GaAs Nanowire SEM Images

Abstract

The detailed study of GaAs nanowires synthesized by molecular beam epitaxy performed by scanning electron microscopy allowed to reveal the presence of specific contrast in the images obtained. To understand the causes of the phenomenon the transmission electron microscopy of nanowire crystal structure was carried out. The results showed that it could be caused by the segments having polytypic crystal phase. It was also confirmed by the modelling of the electron beam scattering on such nanowire arrays.

Authors:
;  [1]; ;  [2]; ;  [1]
  1. St. Petersburg Academic University Russian Academy of Sciences (Russian Federation)
  2. Ioffe Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22749954
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 5; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL STRUCTURE; ELECTRON BEAMS; GALLIUM ARSENIDES; IMAGES; MOLECULAR BEAM EPITAXY; NANOWIRES; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Soshnikov, I. P., E-mail: ipsosh@beam.ioffe.ru, Kotlyar, K. P., Bert, N. A., Kirilenko, D. A., Bouravleuv, A. D., and Cirlin, G. E. The Features of GaAs Nanowire SEM Images. United States: N. p., 2018. Web. doi:10.1134/S1063782618050317.
Soshnikov, I. P., E-mail: ipsosh@beam.ioffe.ru, Kotlyar, K. P., Bert, N. A., Kirilenko, D. A., Bouravleuv, A. D., & Cirlin, G. E. The Features of GaAs Nanowire SEM Images. United States. doi:10.1134/S1063782618050317.
Soshnikov, I. P., E-mail: ipsosh@beam.ioffe.ru, Kotlyar, K. P., Bert, N. A., Kirilenko, D. A., Bouravleuv, A. D., and Cirlin, G. E. Tue . "The Features of GaAs Nanowire SEM Images". United States. doi:10.1134/S1063782618050317.
@article{osti_22749954,
title = {The Features of GaAs Nanowire SEM Images},
author = {Soshnikov, I. P., E-mail: ipsosh@beam.ioffe.ru and Kotlyar, K. P. and Bert, N. A. and Kirilenko, D. A. and Bouravleuv, A. D. and Cirlin, G. E.},
abstractNote = {The detailed study of GaAs nanowires synthesized by molecular beam epitaxy performed by scanning electron microscopy allowed to reveal the presence of specific contrast in the images obtained. To understand the causes of the phenomenon the transmission electron microscopy of nanowire crystal structure was carried out. The results showed that it could be caused by the segments having polytypic crystal phase. It was also confirmed by the modelling of the electron beam scattering on such nanowire arrays.},
doi = {10.1134/S1063782618050317},
journal = {Semiconductors},
issn = {1063-7826},
number = 5,
volume = 52,
place = {United States},
year = {2018},
month = {5}
}