skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Molecular Beam Epitaxy of Materials Interfaces with Atomic Precision

Abstract

In this contribution a few selected examples to engineer material interfaces in nanostructured solids with atomic precision by means of molecular beam epitaxy (MBE) are presented. The examples include 2D electron gas systems for quantum transport and mesoscopic physics, quantum cascade lasers, Sb-based materials, ferromagnet-semiconductor heterostructures, as well as oxide materials for electronics and quantum physics. Finally, the prospects to fabricate novel van-der-Waals heterostructures are briefly discussed.

Authors:
 [1]
  1. Paul Drude Institute for Solid State Electronics (Germany)
Publication Date:
OSTI Identifier:
22749951
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 5; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACCURACY; ELECTRON GAS; INTERFACES; MOLECULAR BEAM EPITAXY; OXIDES; QUANTUM MECHANICS; VAN DER WAALS FORCES

Citation Formats

Ploog, K. H., E-mail: KlausH.Ploog@t-online.de. Molecular Beam Epitaxy of Materials Interfaces with Atomic Precision. United States: N. p., 2018. Web. doi:10.1134/S1063782618050238.
Ploog, K. H., E-mail: KlausH.Ploog@t-online.de. Molecular Beam Epitaxy of Materials Interfaces with Atomic Precision. United States. doi:10.1134/S1063782618050238.
Ploog, K. H., E-mail: KlausH.Ploog@t-online.de. Tue . "Molecular Beam Epitaxy of Materials Interfaces with Atomic Precision". United States. doi:10.1134/S1063782618050238.
@article{osti_22749951,
title = {Molecular Beam Epitaxy of Materials Interfaces with Atomic Precision},
author = {Ploog, K. H., E-mail: KlausH.Ploog@t-online.de},
abstractNote = {In this contribution a few selected examples to engineer material interfaces in nanostructured solids with atomic precision by means of molecular beam epitaxy (MBE) are presented. The examples include 2D electron gas systems for quantum transport and mesoscopic physics, quantum cascade lasers, Sb-based materials, ferromagnet-semiconductor heterostructures, as well as oxide materials for electronics and quantum physics. Finally, the prospects to fabricate novel van-der-Waals heterostructures are briefly discussed.},
doi = {10.1134/S1063782618050238},
journal = {Semiconductors},
issn = {1063-7826},
number = 5,
volume = 52,
place = {United States},
year = {2018},
month = {5}
}