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Title: Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation

Abstract

GaAs thermal smoothing at temperatures T ≤ 650°C in the conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures surface smoothing is changed to roughening. Possible reasons of surface roughening at elevated temperatures are studied by means of Monte Carlo simulation and compared with the experimental results on GaAs. It is proved that GaAs roughening at elevated temperatures is caused by kinetic instabilities due to deviations from equilibrium towards growth or sublimation. The microscopic mechanisms of kinetic-driven roughening are discussed.

Authors:
; ; ; ; ;  [1]
  1. Rzhanov Institute of Semiconductor Physics (Russian Federation)
Publication Date:
OSTI Identifier:
22749950
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 5; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COMPUTERIZED SIMULATION; CRYSTAL GROWTH; GALLIUM ARSENIDES; MONTE CARLO METHOD; TEMPERATURE RANGE 0400-1000 K

Citation Formats

Kazantsev, D. M., Akhundov, I. O., Alperovich, V. L., E-mail: alper@isp.nsc.ru, Shwartz, N. L., Kozhukhov, A. S., and Latyshev, A. V. Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation. United States: N. p., 2018. Web. doi:10.1134/S1063782618050147.
Kazantsev, D. M., Akhundov, I. O., Alperovich, V. L., E-mail: alper@isp.nsc.ru, Shwartz, N. L., Kozhukhov, A. S., & Latyshev, A. V. Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation. United States. doi:10.1134/S1063782618050147.
Kazantsev, D. M., Akhundov, I. O., Alperovich, V. L., E-mail: alper@isp.nsc.ru, Shwartz, N. L., Kozhukhov, A. S., and Latyshev, A. V. Tue . "Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation". United States. doi:10.1134/S1063782618050147.
@article{osti_22749950,
title = {Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation},
author = {Kazantsev, D. M. and Akhundov, I. O. and Alperovich, V. L., E-mail: alper@isp.nsc.ru and Shwartz, N. L. and Kozhukhov, A. S. and Latyshev, A. V.},
abstractNote = {GaAs thermal smoothing at temperatures T ≤ 650°C in the conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures surface smoothing is changed to roughening. Possible reasons of surface roughening at elevated temperatures are studied by means of Monte Carlo simulation and compared with the experimental results on GaAs. It is proved that GaAs roughening at elevated temperatures is caused by kinetic instabilities due to deviations from equilibrium towards growth or sublimation. The microscopic mechanisms of kinetic-driven roughening are discussed.},
doi = {10.1134/S1063782618050147},
journal = {Semiconductors},
issn = {1063-7826},
number = 5,
volume = 52,
place = {United States},
year = {2018},
month = {5}
}