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Title: Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands

Abstract

We report on fabrication and studies of composite heterostuctures consisting of an Al{sub 0.55}Ga{sub 0.45}N/A{sub l0.8}Ga{sub 0.2}N quantum well and surface Al nanoislands, grown by plasma-assisted molecularbeam epitaxy on c-sapphire substrates. The influence of a substrate temperature varied between 320 and 700ºC on the size and density of the deposited Al nanoislands is evaluated. The effect of Al nanoislands on decay kinetics of the quantum well middle-ultraviolet photoluminescence has been investigated by time resolved photoluminescence. The samples with the maximum density of Al nanoislands of 10{sup 8} cm{sup –2} and lateral dimensions in the range of 100–500 nm demonstrated shortening of the photoluminescence lifetime, induced by interaction of the emitting quantum well and the plasmonic metal particles.

Authors:
; ; ; ; ; ; ; ; ;  [1]
  1. Ioffe Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22749949
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 5; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DECAY; DEPOSITS; EPITAXY; FABRICATION; INTERACTIONS; KINETICS; METALS; PARTICLES; PHOTOLUMINESCENCE; PLASMA; QUANTUM WELLS; SAPPHIRE; SEMICONDUCTOR MATERIALS; SUBSTRATES; TIME RESOLUTION; ULTRAVIOLET RADIATION

Citation Formats

Evropeytsev, E. A., E-mail: evropeitsev@beam.ioffe.ru, Semenov, A. N., Nechaev, D. V., Jmerik, V. N., Kaibyshev, V. Kh., Troshkov, S. I., Brunkov, P. N., Usikova, A. A., Ivanov, S. V., and Toropov, A. A. Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands. United States: N. p., 2018. Web. doi:10.1134/S1063782618050056.
Evropeytsev, E. A., E-mail: evropeitsev@beam.ioffe.ru, Semenov, A. N., Nechaev, D. V., Jmerik, V. N., Kaibyshev, V. Kh., Troshkov, S. I., Brunkov, P. N., Usikova, A. A., Ivanov, S. V., & Toropov, A. A. Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands. United States. doi:10.1134/S1063782618050056.
Evropeytsev, E. A., E-mail: evropeitsev@beam.ioffe.ru, Semenov, A. N., Nechaev, D. V., Jmerik, V. N., Kaibyshev, V. Kh., Troshkov, S. I., Brunkov, P. N., Usikova, A. A., Ivanov, S. V., and Toropov, A. A. Tue . "Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands". United States. doi:10.1134/S1063782618050056.
@article{osti_22749949,
title = {Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands},
author = {Evropeytsev, E. A., E-mail: evropeitsev@beam.ioffe.ru and Semenov, A. N. and Nechaev, D. V. and Jmerik, V. N. and Kaibyshev, V. Kh. and Troshkov, S. I. and Brunkov, P. N. and Usikova, A. A. and Ivanov, S. V. and Toropov, A. A.},
abstractNote = {We report on fabrication and studies of composite heterostuctures consisting of an Al{sub 0.55}Ga{sub 0.45}N/A{sub l0.8}Ga{sub 0.2}N quantum well and surface Al nanoislands, grown by plasma-assisted molecularbeam epitaxy on c-sapphire substrates. The influence of a substrate temperature varied between 320 and 700ºC on the size and density of the deposited Al nanoislands is evaluated. The effect of Al nanoislands on decay kinetics of the quantum well middle-ultraviolet photoluminescence has been investigated by time resolved photoluminescence. The samples with the maximum density of Al nanoislands of 10{sup 8} cm{sup –2} and lateral dimensions in the range of 100–500 nm demonstrated shortening of the photoluminescence lifetime, induced by interaction of the emitting quantum well and the plasmonic metal particles.},
doi = {10.1134/S1063782618050056},
journal = {Semiconductors},
issn = {1063-7826},
number = 5,
volume = 52,
place = {United States},
year = {2018},
month = {5}
}