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Title: Ion Synthesis: Si–Ge Quantum Dots

Abstract

We present a method of Si–Ge QDs formation by ion beam implantation (IBI) technique and high temperature annealing for self-organization. Implantation doses varied from 10{sup 14} to 10{sup 17} cm{sup –2}, ion energies ranged from 50 to 150 keV, annealing proceeded at temperature of 950 to 1050°C in argon environment. Formed QDs show strong infrared (IR) photoluminescence (PL) in the temperature region 15–250 K.

Authors:
 [1];  [2];  [3];  [4];  [1]
  1. National Research University of Electronic Technology (Russian Federation)
  2. Angstrrem (Russian Federation)
  3. Angstrem-T (Russian Federation)
  4. P.N. Lebedev Physical Institute of the RAS (Russian Federation)
Publication Date:
OSTI Identifier:
22749948
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 5; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ION BEAMS; KEV RANGE; QUANTUM DOTS; TEMPERATURE RANGE 0400-1000 K

Citation Formats

Gerasimenko, N. N., Balakleyskiy, N. S., E-mail: balakleyskiy@gmail.com, Volokhovskiy, A. D., Smirnov, D. I., and Zaporozhan, O. A. Ion Synthesis: Si–Ge Quantum Dots. United States: N. p., 2018. Web. doi:10.1134/S1063782618050081.
Gerasimenko, N. N., Balakleyskiy, N. S., E-mail: balakleyskiy@gmail.com, Volokhovskiy, A. D., Smirnov, D. I., & Zaporozhan, O. A. Ion Synthesis: Si–Ge Quantum Dots. United States. doi:10.1134/S1063782618050081.
Gerasimenko, N. N., Balakleyskiy, N. S., E-mail: balakleyskiy@gmail.com, Volokhovskiy, A. D., Smirnov, D. I., and Zaporozhan, O. A. Tue . "Ion Synthesis: Si–Ge Quantum Dots". United States. doi:10.1134/S1063782618050081.
@article{osti_22749948,
title = {Ion Synthesis: Si–Ge Quantum Dots},
author = {Gerasimenko, N. N. and Balakleyskiy, N. S., E-mail: balakleyskiy@gmail.com and Volokhovskiy, A. D. and Smirnov, D. I. and Zaporozhan, O. A.},
abstractNote = {We present a method of Si–Ge QDs formation by ion beam implantation (IBI) technique and high temperature annealing for self-organization. Implantation doses varied from 10{sup 14} to 10{sup 17} cm{sup –2}, ion energies ranged from 50 to 150 keV, annealing proceeded at temperature of 950 to 1050°C in argon environment. Formed QDs show strong infrared (IR) photoluminescence (PL) in the temperature region 15–250 K.},
doi = {10.1134/S1063782618050081},
journal = {Semiconductors},
issn = {1063-7826},
number = 5,
volume = 52,
place = {United States},
year = {2018},
month = {5}
}