skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Alternative Technology for Creating Nanostructures Using Dip Pen Nanolithography

Abstract

For modern microelectronics, at the present time, the technologies of consciousness smart structures play an important role, which can provide accuracy, stability and high quality of the structures. Submicron lithography methods are quite expensive and have natural size limitations, not allowing the production of structures with an extremely small lateral limitation. Therefore, an intensive search was conducted for alternative methods for creating submicron resolution structures. Especially attractive one is the possibility of self-organization effects utilization, where the nanostructure of a certain size is formed under the influence of internal forces. The dip pen nanolithography method based on a scanning probe microscope uses a directwrite technology and allows one to carry out a playback of small size structures with high accuracy. In the experiment, a substrate coated with Au (15 nm) using a DPN technique is applied to the polymer to form a desired pattern nano-sized channel. The experiment was conducted using a pointed probe SiN, coated MHA-Acetonitrile, on the Si(111)/Fe{sub 3}Si/Au structure.

Authors:
;  [1]
  1. Russian Academy of Science, Kirensky Institute of Physics (Russian Federation)
Publication Date:
OSTI Identifier:
22749946
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 5; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACCURACY; ACETONITRILE; IRON SILICIDES; MICROELECTRONICS; MICROSCOPES; NANOSTRUCTURES; POLYMERS; PROBES; RESOLUTION; SILICON NITRIDES; SUBSTRATES

Citation Formats

Lukyanenko, A. V., E-mail: lav@iph.krasn.ru, and Smolyarova, T. E. Alternative Technology for Creating Nanostructures Using Dip Pen Nanolithography. United States: N. p., 2018. Web. doi:10.1134/S1063782618050202.
Lukyanenko, A. V., E-mail: lav@iph.krasn.ru, & Smolyarova, T. E. Alternative Technology for Creating Nanostructures Using Dip Pen Nanolithography. United States. doi:10.1134/S1063782618050202.
Lukyanenko, A. V., E-mail: lav@iph.krasn.ru, and Smolyarova, T. E. Tue . "Alternative Technology for Creating Nanostructures Using Dip Pen Nanolithography". United States. doi:10.1134/S1063782618050202.
@article{osti_22749946,
title = {Alternative Technology for Creating Nanostructures Using Dip Pen Nanolithography},
author = {Lukyanenko, A. V., E-mail: lav@iph.krasn.ru and Smolyarova, T. E.},
abstractNote = {For modern microelectronics, at the present time, the technologies of consciousness smart structures play an important role, which can provide accuracy, stability and high quality of the structures. Submicron lithography methods are quite expensive and have natural size limitations, not allowing the production of structures with an extremely small lateral limitation. Therefore, an intensive search was conducted for alternative methods for creating submicron resolution structures. Especially attractive one is the possibility of self-organization effects utilization, where the nanostructure of a certain size is formed under the influence of internal forces. The dip pen nanolithography method based on a scanning probe microscope uses a directwrite technology and allows one to carry out a playback of small size structures with high accuracy. In the experiment, a substrate coated with Au (15 nm) using a DPN technique is applied to the polymer to form a desired pattern nano-sized channel. The experiment was conducted using a pointed probe SiN, coated MHA-Acetonitrile, on the Si(111)/Fe{sub 3}Si/Au structure.},
doi = {10.1134/S1063782618050202},
journal = {Semiconductors},
issn = {1063-7826},
number = 5,
volume = 52,
place = {United States},
year = {2018},
month = {5}
}