Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy
- Saint Petersburg National Research Academic University of the Russian Academy of Sciences (Russian Federation)
The studies of the growth kinetics of GaN layers grown on nitridated Si(111) substrates by plasmaassisted molecular beam epitaxy are presented. The nucleation and overgrowth of the separate GaN/Si(111) nanocolumns during single growth run is demonstrated. The technique of the in situ control of the GaN/Si(111) nanocolumns lateral size is proposed.
- OSTI ID:
- 22749943
- Journal Information:
- Semiconductors, Vol. 52, Issue 5; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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