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Title: Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Abstract

The studies of the growth kinetics of GaN layers grown on nitridated Si(111) substrates by plasmaassisted molecular beam epitaxy are presented. The nucleation and overgrowth of the separate GaN/Si(111) nanocolumns during single growth run is demonstrated. The technique of the in situ control of the GaN/Si(111) nanocolumns lateral size is proposed.

Authors:
; ; ;  [1]
  1. Saint Petersburg National Research Academic University of the Russian Academy of Sciences (Russian Federation)
Publication Date:
OSTI Identifier:
22749943
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 5; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; GALLIUM NITRIDES; MOLECULAR BEAM EPITAXY; SUBSTRATES

Citation Formats

Timoshnev, S. N., E-mail: timoshnev@mail.ru, Mizerov, A. M., Sobolev, M. S., and Nikitina, E. V. Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy. United States: N. p., 2018. Web. doi:10.1134/S1063782618050342.
Timoshnev, S. N., E-mail: timoshnev@mail.ru, Mizerov, A. M., Sobolev, M. S., & Nikitina, E. V. Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy. United States. doi:10.1134/S1063782618050342.
Timoshnev, S. N., E-mail: timoshnev@mail.ru, Mizerov, A. M., Sobolev, M. S., and Nikitina, E. V. Tue . "Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy". United States. doi:10.1134/S1063782618050342.
@article{osti_22749943,
title = {Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy},
author = {Timoshnev, S. N., E-mail: timoshnev@mail.ru and Mizerov, A. M. and Sobolev, M. S. and Nikitina, E. V.},
abstractNote = {The studies of the growth kinetics of GaN layers grown on nitridated Si(111) substrates by plasmaassisted molecular beam epitaxy are presented. The nucleation and overgrowth of the separate GaN/Si(111) nanocolumns during single growth run is demonstrated. The technique of the in situ control of the GaN/Si(111) nanocolumns lateral size is proposed.},
doi = {10.1134/S1063782618050342},
journal = {Semiconductors},
issn = {1063-7826},
number = 5,
volume = 52,
place = {United States},
year = {2018},
month = {5}
}