skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE

Abstract

We report on a new approach to fabricate regular arrays of GaN nanorods (NRs) with InGaN QWs by plasma-assisted molecular-beam epitaxy (PA MBE) on micro-cone patterned sapphire substrates (μ-CPSSs). A two-stage PA MBE fabrication process of GaN NRs has been developed, starting with a high temperature nucleation layer growth at metal-rich conditions to aggregate selectively GaN nucleus on c-oriented areas of the μ-CPSSs and followed by growth of 1-μm-thick GaN NRs at strongly nitrogen-rich conditions exactly on the cone tips. These results are explained by energetically favorable GaN growth on the (000-) oriented sapphire surface. Both micro-photoluminescence and micro-cathodoluminescence confirm the formation of regular array of optically and spectrally isolated NRs without usage of any nanolithography.

Authors:
; ; ; ; ; ; ;  [1];  [2];  [1]
  1. Ioffe Institute (Russian Federation)
  2. Linköping University, Department of Physics, Chemistry and Biology (IFM) (Sweden)
Publication Date:
OSTI Identifier:
22749942
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 5; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; GALLIUM NITRIDES; MOLECULAR BEAM EPITAXY; PALLADIUM; PLASMA; QUANTUM WELLS; SAPPHIRE; SUBSTRATES; TEMPERATURE RANGE 0400-1000 K

Citation Formats

Jmerik, V. N., E-mail: jmerik@pls.ioffe.ru, Shubina, T. V., Nechaev, D. V., Semenov, A. N., Kirilenko, D. A., Davydov, V. Yu., Smirnov, A. N., Eliseev, I. A., Posina, G., and Ivanov, S. V. Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE. United States: N. p., 2018. Web. doi:10.1134/S1063782618050123.
Jmerik, V. N., E-mail: jmerik@pls.ioffe.ru, Shubina, T. V., Nechaev, D. V., Semenov, A. N., Kirilenko, D. A., Davydov, V. Yu., Smirnov, A. N., Eliseev, I. A., Posina, G., & Ivanov, S. V. Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE. United States. doi:10.1134/S1063782618050123.
Jmerik, V. N., E-mail: jmerik@pls.ioffe.ru, Shubina, T. V., Nechaev, D. V., Semenov, A. N., Kirilenko, D. A., Davydov, V. Yu., Smirnov, A. N., Eliseev, I. A., Posina, G., and Ivanov, S. V. Tue . "Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE". United States. doi:10.1134/S1063782618050123.
@article{osti_22749942,
title = {Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE},
author = {Jmerik, V. N., E-mail: jmerik@pls.ioffe.ru and Shubina, T. V. and Nechaev, D. V. and Semenov, A. N. and Kirilenko, D. A. and Davydov, V. Yu. and Smirnov, A. N. and Eliseev, I. A. and Posina, G. and Ivanov, S. V.},
abstractNote = {We report on a new approach to fabricate regular arrays of GaN nanorods (NRs) with InGaN QWs by plasma-assisted molecular-beam epitaxy (PA MBE) on micro-cone patterned sapphire substrates (μ-CPSSs). A two-stage PA MBE fabrication process of GaN NRs has been developed, starting with a high temperature nucleation layer growth at metal-rich conditions to aggregate selectively GaN nucleus on c-oriented areas of the μ-CPSSs and followed by growth of 1-μm-thick GaN NRs at strongly nitrogen-rich conditions exactly on the cone tips. These results are explained by energetically favorable GaN growth on the (000-) oriented sapphire surface. Both micro-photoluminescence and micro-cathodoluminescence confirm the formation of regular array of optically and spectrally isolated NRs without usage of any nanolithography.},
doi = {10.1134/S1063782618050123},
journal = {Semiconductors},
issn = {1063-7826},
number = 5,
volume = 52,
place = {United States},
year = {2018},
month = {5}
}