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Title: Electrical Properties of p-NiO/n-Si Heterostructures Based on Nanostructured Silicon

Abstract

Silicon nanowires are formed on n-Si substrates by chemical etching. p-NiO/n-Si heterostructures are fabricated by reactive magnetron sputtering. The energy diagram of anisotype p-NiO/n-Si heterostructures is constructed according to the Anderson model. The current–voltage and capacitance–voltage characteristics are measured and analyzed. The main current-transport mechanisms through the p-NiO/n-Si heterojunction under forward and reverse biases are established.

Authors:
; ;  [1]
  1. Yuriy Fedkovych Chernivtsi National University (Ukraine)
Publication Date:
OSTI Identifier:
22749887
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 7; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CAPACITANCE; ELECTRIC POTENTIAL; ETCHING; HETEROJUNCTIONS; MAGNETRONS; NANOWIRES; NICKEL OXIDES; SILICON; SPUTTERING; SUBSTRATES

Citation Formats

Parkhomenko, H. P., E-mail: h.parkhomenko@chnu.edu.ua, Solovan, M. N., and Maryanchuk, P. D. Electrical Properties of p-NiO/n-Si Heterostructures Based on Nanostructured Silicon. United States: N. p., 2018. Web. doi:10.1134/S1063782618070163.
Parkhomenko, H. P., E-mail: h.parkhomenko@chnu.edu.ua, Solovan, M. N., & Maryanchuk, P. D. Electrical Properties of p-NiO/n-Si Heterostructures Based on Nanostructured Silicon. United States. doi:10.1134/S1063782618070163.
Parkhomenko, H. P., E-mail: h.parkhomenko@chnu.edu.ua, Solovan, M. N., and Maryanchuk, P. D. Sun . "Electrical Properties of p-NiO/n-Si Heterostructures Based on Nanostructured Silicon". United States. doi:10.1134/S1063782618070163.
@article{osti_22749887,
title = {Electrical Properties of p-NiO/n-Si Heterostructures Based on Nanostructured Silicon},
author = {Parkhomenko, H. P., E-mail: h.parkhomenko@chnu.edu.ua and Solovan, M. N. and Maryanchuk, P. D.},
abstractNote = {Silicon nanowires are formed on n-Si substrates by chemical etching. p-NiO/n-Si heterostructures are fabricated by reactive magnetron sputtering. The energy diagram of anisotype p-NiO/n-Si heterostructures is constructed according to the Anderson model. The current–voltage and capacitance–voltage characteristics are measured and analyzed. The main current-transport mechanisms through the p-NiO/n-Si heterojunction under forward and reverse biases are established.},
doi = {10.1134/S1063782618070163},
journal = {Semiconductors},
issn = {1063-7826},
number = 7,
volume = 52,
place = {United States},
year = {2018},
month = {7}
}