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Title: Ultrafast Dynamics of Photoexcited Charge Carriers in In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As Superlattices under Femtosecond Laser Excitation

Abstract

The results of experimental studies of the time dynamics of photoexcited charge carriers in In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As superlattices grown by molecular-beam epitaxy on a GaAs substrate with a metamorphic buffer are reported. On the basis of the results of the numerical simulation of band diagrams, the optimal thickness of the In{sub 0.52}Al{sub 0.48}As barrier layer (4 nm) is chosen. At this thickness, the electron wave functions in In{sub 0.53}Ga{sub 0.47}As substantially overlap the In{sub 0.52}Al{sub 0.48}As barriers. This makes it possible to attain a short lifetime of photoexcited charge carriers (τ ~ 3.4 ps) at the wavelength λ = 800 nm and the pumping power 50 mW without doping of the In{sub 0.53}Ga{sub 0.47}As layer with beryllium. It is shown that an increase in the wavelength to λ = 930 nm (at the same pumping power) yields a decrease in the lifetime of photoexcited charge carriers to τ ~ 2 ps. This effect is attributed to an increase in the capture cross section of trapping states for electrons with lower energies and to a decrease in the occupancy of traps at lower excitation densities.

Authors:
; ; ; ;  [1]; ; ; ;  [2]
  1. Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation)
  2. Moscow Technological University (MIREA) (Russian Federation)
Publication Date:
OSTI Identifier:
22749886
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 7; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHARGE CARRIERS; COMPUTERIZED SIMULATION; CROSS SECTIONS; DOPED MATERIALS; ELECTRONIC STRUCTURE; EXCITATION; GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; SUPERLATTICES; WAVE FUNCTIONS

Citation Formats

Ponomarev, D. S., E-mail: ponomarev-dmitr@mail.ru, Khabibullin, R. A., Klochkov, A. N., Yachmenev, A. E., Bugaev, A. S., Khusyainov, D. I., Buriakov, A. M., Bilyk, V. P., and Mishina, E. D. Ultrafast Dynamics of Photoexcited Charge Carriers in In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As Superlattices under Femtosecond Laser Excitation. United States: N. p., 2018. Web. doi:10.1134/S1063782618070175.
Ponomarev, D. S., E-mail: ponomarev-dmitr@mail.ru, Khabibullin, R. A., Klochkov, A. N., Yachmenev, A. E., Bugaev, A. S., Khusyainov, D. I., Buriakov, A. M., Bilyk, V. P., & Mishina, E. D. Ultrafast Dynamics of Photoexcited Charge Carriers in In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As Superlattices under Femtosecond Laser Excitation. United States. doi:10.1134/S1063782618070175.
Ponomarev, D. S., E-mail: ponomarev-dmitr@mail.ru, Khabibullin, R. A., Klochkov, A. N., Yachmenev, A. E., Bugaev, A. S., Khusyainov, D. I., Buriakov, A. M., Bilyk, V. P., and Mishina, E. D. Sun . "Ultrafast Dynamics of Photoexcited Charge Carriers in In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As Superlattices under Femtosecond Laser Excitation". United States. doi:10.1134/S1063782618070175.
@article{osti_22749886,
title = {Ultrafast Dynamics of Photoexcited Charge Carriers in In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As Superlattices under Femtosecond Laser Excitation},
author = {Ponomarev, D. S., E-mail: ponomarev-dmitr@mail.ru and Khabibullin, R. A. and Klochkov, A. N. and Yachmenev, A. E. and Bugaev, A. S. and Khusyainov, D. I. and Buriakov, A. M. and Bilyk, V. P. and Mishina, E. D.},
abstractNote = {The results of experimental studies of the time dynamics of photoexcited charge carriers in In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As superlattices grown by molecular-beam epitaxy on a GaAs substrate with a metamorphic buffer are reported. On the basis of the results of the numerical simulation of band diagrams, the optimal thickness of the In{sub 0.52}Al{sub 0.48}As barrier layer (4 nm) is chosen. At this thickness, the electron wave functions in In{sub 0.53}Ga{sub 0.47}As substantially overlap the In{sub 0.52}Al{sub 0.48}As barriers. This makes it possible to attain a short lifetime of photoexcited charge carriers (τ ~ 3.4 ps) at the wavelength λ = 800 nm and the pumping power 50 mW without doping of the In{sub 0.53}Ga{sub 0.47}As layer with beryllium. It is shown that an increase in the wavelength to λ = 930 nm (at the same pumping power) yields a decrease in the lifetime of photoexcited charge carriers to τ ~ 2 ps. This effect is attributed to an increase in the capture cross section of trapping states for electrons with lower energies and to a decrease in the occupancy of traps at lower excitation densities.},
doi = {10.1134/S1063782618070175},
journal = {Semiconductors},
issn = {1063-7826},
number = 7,
volume = 52,
place = {United States},
year = {2018},
month = {7}
}