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Title: Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy

Abstract

It is shown for the first time that the structural and optical functional characteristics of integrated GaAs/Si(100) heterostructures can be controlled by using misoriented Si(100) substrates and their preliminary etching. The growth of an epitaxial GaAs layer on a Si substrate without the formation of antiphase domains can be carried out on a substrate deviated from the (100) singular plane by an angle smaller than 4°–6° or without a transition layer of GaAs nanocolumns. Preliminary treatment of the silicon substrate by etching makes it possible to use it for the vapor-phase epitaxial growth of a single-crystal GaAs film with a considerably smaller relaxation coefficient, which has a positive effect on the structural quality of the film. These data are in good agreement with the results of IR reflectance spectroscopy and photoluminescence and ultraviolet spectroscopy. The features of the optical properties of integrated GaAs/Si(100) heterostructures in the infrared and ultraviolet spectral regions are also defined by the relaxation coefficient.

Authors:
; ; ; ; ;  [1]; ; ; ;  [2]
  1. Voronezh State University (Russian Federation)
  2. Ioffe Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22749844
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 8; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; ETCHING; GALLIUM ARSENIDES; OPTICAL PROPERTIES; SUBSTRATES; ULTRAVIOLET RADIATION; VAPOR PHASE EPITAXY

Citation Formats

Seredin, P. V., E-mail: paul@phys.vsu.ru, Goloshchapov, D. L., Zolotukhin, D. S., Lenshin, A. S., Lukin, A. N., Khudyakov, Yu. Yu., Arsentyev, I. N., Zhabotinsky, A. V., Nikolaev, D. N., and Pikhtin, N. A. Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy. United States: N. p., 2018. Web. doi:10.1134/S1063782618080195.
Seredin, P. V., E-mail: paul@phys.vsu.ru, Goloshchapov, D. L., Zolotukhin, D. S., Lenshin, A. S., Lukin, A. N., Khudyakov, Yu. Yu., Arsentyev, I. N., Zhabotinsky, A. V., Nikolaev, D. N., & Pikhtin, N. A. Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy. United States. doi:10.1134/S1063782618080195.
Seredin, P. V., E-mail: paul@phys.vsu.ru, Goloshchapov, D. L., Zolotukhin, D. S., Lenshin, A. S., Lukin, A. N., Khudyakov, Yu. Yu., Arsentyev, I. N., Zhabotinsky, A. V., Nikolaev, D. N., and Pikhtin, N. A. Wed . "Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy". United States. doi:10.1134/S1063782618080195.
@article{osti_22749844,
title = {Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy},
author = {Seredin, P. V., E-mail: paul@phys.vsu.ru and Goloshchapov, D. L. and Zolotukhin, D. S. and Lenshin, A. S. and Lukin, A. N. and Khudyakov, Yu. Yu. and Arsentyev, I. N. and Zhabotinsky, A. V. and Nikolaev, D. N. and Pikhtin, N. A.},
abstractNote = {It is shown for the first time that the structural and optical functional characteristics of integrated GaAs/Si(100) heterostructures can be controlled by using misoriented Si(100) substrates and their preliminary etching. The growth of an epitaxial GaAs layer on a Si substrate without the formation of antiphase domains can be carried out on a substrate deviated from the (100) singular plane by an angle smaller than 4°–6° or without a transition layer of GaAs nanocolumns. Preliminary treatment of the silicon substrate by etching makes it possible to use it for the vapor-phase epitaxial growth of a single-crystal GaAs film with a considerably smaller relaxation coefficient, which has a positive effect on the structural quality of the film. These data are in good agreement with the results of IR reflectance spectroscopy and photoluminescence and ultraviolet spectroscopy. The features of the optical properties of integrated GaAs/Si(100) heterostructures in the infrared and ultraviolet spectral regions are also defined by the relaxation coefficient.},
doi = {10.1134/S1063782618080195},
journal = {Semiconductors},
issn = {1063-7826},
number = 8,
volume = 52,
place = {United States},
year = {2018},
month = {8}
}