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Title: Effect of High-Dose Carbon Implantation on the Phase Composition, Morphology, and Field-Emission Properties of Silicon Crystals

Abstract

The study of high-dose carbon-ion implantation without post-process annealing reveals significant modification of the morphology, surface-layer phase composition, and field-emission properties of silicon wafers. The effect of the electrical conductivity type on the evolution of the silicon-crystal surface morphology, upon a variation in the irradiation dose, and a high content of diamond-like phases in the region of microprotrusions at the maximum dose regardless of the electrical conductivity type are found. It is demonstrated that the high-dose implantation of carbon in silicon wafers with a pre-structured surface increases the maximum density of field-emission currents by more than two orders of magnitude.

Authors:
 [1]
  1. Kotel’nikov Institute of Radio Engineering and Electronics, Saratov Branch, Russian Academy of Sciences (Russian Federation)
Publication Date:
OSTI Identifier:
22749812
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 9; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARBON IONS; ELECTRIC CONDUCTIVITY; FIELD EMISSION; MORPHOLOGY; RADIATION DOSES; SILICON

Citation Formats

Yafarov, R. K., E-mail: pirpc@yandex.ru. Effect of High-Dose Carbon Implantation on the Phase Composition, Morphology, and Field-Emission Properties of Silicon Crystals. United States: N. p., 2018. Web. doi:10.1134/S1063782618090245.
Yafarov, R. K., E-mail: pirpc@yandex.ru. Effect of High-Dose Carbon Implantation on the Phase Composition, Morphology, and Field-Emission Properties of Silicon Crystals. United States. doi:10.1134/S1063782618090245.
Yafarov, R. K., E-mail: pirpc@yandex.ru. Sat . "Effect of High-Dose Carbon Implantation on the Phase Composition, Morphology, and Field-Emission Properties of Silicon Crystals". United States. doi:10.1134/S1063782618090245.
@article{osti_22749812,
title = {Effect of High-Dose Carbon Implantation on the Phase Composition, Morphology, and Field-Emission Properties of Silicon Crystals},
author = {Yafarov, R. K., E-mail: pirpc@yandex.ru},
abstractNote = {The study of high-dose carbon-ion implantation without post-process annealing reveals significant modification of the morphology, surface-layer phase composition, and field-emission properties of silicon wafers. The effect of the electrical conductivity type on the evolution of the silicon-crystal surface morphology, upon a variation in the irradiation dose, and a high content of diamond-like phases in the region of microprotrusions at the maximum dose regardless of the electrical conductivity type are found. It is demonstrated that the high-dose implantation of carbon in silicon wafers with a pre-structured surface increases the maximum density of field-emission currents by more than two orders of magnitude.},
doi = {10.1134/S1063782618090245},
journal = {Semiconductors},
issn = {1063-7826},
number = 9,
volume = 52,
place = {United States},
year = {2018},
month = {9}
}