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Title: Formation of Luminescence Spectra and Emission Intensity in the UV and Visible Spectral Regions for n-ZnO/p-GaN and n-ZnO/p-ZnO Structures when Depositing ZnO Films by High-Frequency Magnetron Sputtering

Abstract

The emission spectra of structures based on ZnO films deposited by high-frequency magnetron sputtering are studied. Clearly pronounced emission lines associated with the recombination of free (λ = 363 nm) and bound excitons (λ = 377, 390, 410 nm) are observed in the PL (photoluminescence) spectra (T = 300 K) of n-ZnO/p-GaN:Mg structures, and no substantial emission is observed in the impurity PL region λ = 450–600 nm. Only emission lines characteristic of n-ZnO (λ = 374 nm) are observed in the EL (electroluminescence) spectra of n-ZnO/p-ZnO structures (T = 300 K).

Authors:
;  [1];  [2]
  1. Ioffe Institute (Russian Federation)
  2. Peter the Great St. Petersburg Polytechnic University (Russian Federation)
Publication Date:
OSTI Identifier:
22749780
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 10; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITS; EMISSION SPECTRA; FILMS; MAGNETRONS; SPUTTERING; ZINC OXIDES

Citation Formats

Mezdrogina, M. M., E-mail: Margaret.m@mail.ioffe.ru, Vinogradov, A. Ja., and Kozhanova, Yu. V. Formation of Luminescence Spectra and Emission Intensity in the UV and Visible Spectral Regions for n-ZnO/p-GaN and n-ZnO/p-ZnO Structures when Depositing ZnO Films by High-Frequency Magnetron Sputtering. United States: N. p., 2018. Web. doi:10.1134/S1063782618100123.
Mezdrogina, M. M., E-mail: Margaret.m@mail.ioffe.ru, Vinogradov, A. Ja., & Kozhanova, Yu. V. Formation of Luminescence Spectra and Emission Intensity in the UV and Visible Spectral Regions for n-ZnO/p-GaN and n-ZnO/p-ZnO Structures when Depositing ZnO Films by High-Frequency Magnetron Sputtering. United States. doi:10.1134/S1063782618100123.
Mezdrogina, M. M., E-mail: Margaret.m@mail.ioffe.ru, Vinogradov, A. Ja., and Kozhanova, Yu. V. Mon . "Formation of Luminescence Spectra and Emission Intensity in the UV and Visible Spectral Regions for n-ZnO/p-GaN and n-ZnO/p-ZnO Structures when Depositing ZnO Films by High-Frequency Magnetron Sputtering". United States. doi:10.1134/S1063782618100123.
@article{osti_22749780,
title = {Formation of Luminescence Spectra and Emission Intensity in the UV and Visible Spectral Regions for n-ZnO/p-GaN and n-ZnO/p-ZnO Structures when Depositing ZnO Films by High-Frequency Magnetron Sputtering},
author = {Mezdrogina, M. M., E-mail: Margaret.m@mail.ioffe.ru and Vinogradov, A. Ja. and Kozhanova, Yu. V.},
abstractNote = {The emission spectra of structures based on ZnO films deposited by high-frequency magnetron sputtering are studied. Clearly pronounced emission lines associated with the recombination of free (λ = 363 nm) and bound excitons (λ = 377, 390, 410 nm) are observed in the PL (photoluminescence) spectra (T = 300 K) of n-ZnO/p-GaN:Mg structures, and no substantial emission is observed in the impurity PL region λ = 450–600 nm. Only emission lines characteristic of n-ZnO (λ = 374 nm) are observed in the EL (electroluminescence) spectra of n-ZnO/p-ZnO structures (T = 300 K).},
doi = {10.1134/S1063782618100123},
journal = {Semiconductors},
issn = {1063-7826},
number = 10,
volume = 52,
place = {United States},
year = {2018},
month = {10}
}