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Title: Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities

Abstract

Photovoltaic structures on the basis of GaAs p–i–n junctions with a different number of In{sub 0.4}Ga{sub 0.6}As layers in the space-charge region forming quantum-confined objects are experimentally and theoretically investigated. For all structures, the dependences of the open-circuit voltage on the solar-irradiation concentration are analyzed. It is shown that the implantation of quantum objects leads to the dominance of recombination in them over recombination in the matrix, which manifests itself in a drop in the open-circuit-voltage. An increase in the number of In{sub 0.4}Ga{sub 0.6}As layers leads to a proportional increase in the recombination rate, which is expressed in a proportional increase in the “saturation” current and corresponds to the model proposed in the study.

Authors:
 [1]; ;  [2];  [1]; ;  [2]
  1. Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences (Russian Federation)
  2. Ioffe Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22749778
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 10; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; INDIUM ARSENIDES; PHOTOVOLTAIC EFFECT; RECOMBINATION; SIMULATION; SOLAR CELLS; SPACE CHARGE

Citation Formats

Mintairov, M. A., E-mail: mamint@mail.ioffe.ru, Evstropov, V. V., Mintairov, S. A., Salii, R. A., Shvarts, M. Z., and Kalyuzhnyy, N. A. Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities. United States: N. p., 2018. Web. doi:10.1134/S1063782618100135.
Mintairov, M. A., E-mail: mamint@mail.ioffe.ru, Evstropov, V. V., Mintairov, S. A., Salii, R. A., Shvarts, M. Z., & Kalyuzhnyy, N. A. Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities. United States. doi:10.1134/S1063782618100135.
Mintairov, M. A., E-mail: mamint@mail.ioffe.ru, Evstropov, V. V., Mintairov, S. A., Salii, R. A., Shvarts, M. Z., and Kalyuzhnyy, N. A. Mon . "Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities". United States. doi:10.1134/S1063782618100135.
@article{osti_22749778,
title = {Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities},
author = {Mintairov, M. A., E-mail: mamint@mail.ioffe.ru and Evstropov, V. V. and Mintairov, S. A. and Salii, R. A. and Shvarts, M. Z. and Kalyuzhnyy, N. A.},
abstractNote = {Photovoltaic structures on the basis of GaAs p–i–n junctions with a different number of In{sub 0.4}Ga{sub 0.6}As layers in the space-charge region forming quantum-confined objects are experimentally and theoretically investigated. For all structures, the dependences of the open-circuit voltage on the solar-irradiation concentration are analyzed. It is shown that the implantation of quantum objects leads to the dominance of recombination in them over recombination in the matrix, which manifests itself in a drop in the open-circuit-voltage. An increase in the number of In{sub 0.4}Ga{sub 0.6}As layers leads to a proportional increase in the recombination rate, which is expressed in a proportional increase in the “saturation” current and corresponds to the model proposed in the study.},
doi = {10.1134/S1063782618100135},
journal = {Semiconductors},
issn = {1063-7826},
number = 10,
volume = 52,
place = {United States},
year = {2018},
month = {10}
}