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Title: Multilayer Quantum Well–Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters

Abstract

GaAs photovoltaic converters containing quantum well-dot (QWD) heterostructures are studied. The QWD properties are intermediate between those of quantum wells (QWs) and quantum dots. The QWDs are obtained by the epitaxial deposition of In{sub 0.4}Ga{sub 0.6}As with a nominal thickness of 8 single layers by metal-organic vapor phase epitaxy. QWDs are a dense array of elastically strained islands that localize carriers in three directions and are formed by a local increase in the indium concentration and/ or InGaAs-layer thickness. There are two quantum-well levels of varied nature in structures with QWDs. These levels are manifested in the spectral characteristics of GaAs photovoltaic converters. A short-wavelength peak with a maximum at around 935 nm is associated with absorption in the residual QW, and the long-wavelength peak (1015–1030 nm) is due to absorption in the QWDs. Investigation by transmission electron microscopy demonstrates that an increase in the number of InGaAs layers leads to stronger elastic stresses, which, in turn, increases the carrier confinement energy in the QWDs and lead to a corresponding long-wavelength shift of the internal quantum efficiency spectrum.

Authors:
 [1];  [2]; ;  [1]; ;  [2];  [3];  [2];  [1]
  1. St. Petersburg Academic University (Russian Federation)
  2. Ioffe Institute (Russian Federation)
  3. University of Notre Dame (United States)
Publication Date:
OSTI Identifier:
22749777
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 10; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; INDIUM ARSENIDES; ORGANOMETALLIC COMPOUNDS; PHOTOVOLTAIC EFFECT; QUANTUM DOTS; QUANTUM EFFICIENCY; QUANTUM WELLS; SOLAR CELLS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY

Citation Formats

Mintairov, S. A., E-mail: mintairov@scell.ioffe.ru, Kalyuzhnyy, N. A., Nadtochiy, A. M., Maximov, M. V., Nevedomskiy, V. N., Sokura, L. A., Rouvimov, S. S., Shvarts, M. Z., and Zhukov, A. E. Multilayer Quantum Well–Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters. United States: N. p., 2018. Web. doi:10.1134/S1063782618100147.
Mintairov, S. A., E-mail: mintairov@scell.ioffe.ru, Kalyuzhnyy, N. A., Nadtochiy, A. M., Maximov, M. V., Nevedomskiy, V. N., Sokura, L. A., Rouvimov, S. S., Shvarts, M. Z., & Zhukov, A. E. Multilayer Quantum Well–Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters. United States. doi:10.1134/S1063782618100147.
Mintairov, S. A., E-mail: mintairov@scell.ioffe.ru, Kalyuzhnyy, N. A., Nadtochiy, A. M., Maximov, M. V., Nevedomskiy, V. N., Sokura, L. A., Rouvimov, S. S., Shvarts, M. Z., and Zhukov, A. E. Mon . "Multilayer Quantum Well–Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters". United States. doi:10.1134/S1063782618100147.
@article{osti_22749777,
title = {Multilayer Quantum Well–Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters},
author = {Mintairov, S. A., E-mail: mintairov@scell.ioffe.ru and Kalyuzhnyy, N. A. and Nadtochiy, A. M. and Maximov, M. V. and Nevedomskiy, V. N. and Sokura, L. A. and Rouvimov, S. S. and Shvarts, M. Z. and Zhukov, A. E.},
abstractNote = {GaAs photovoltaic converters containing quantum well-dot (QWD) heterostructures are studied. The QWD properties are intermediate between those of quantum wells (QWs) and quantum dots. The QWDs are obtained by the epitaxial deposition of In{sub 0.4}Ga{sub 0.6}As with a nominal thickness of 8 single layers by metal-organic vapor phase epitaxy. QWDs are a dense array of elastically strained islands that localize carriers in three directions and are formed by a local increase in the indium concentration and/ or InGaAs-layer thickness. There are two quantum-well levels of varied nature in structures with QWDs. These levels are manifested in the spectral characteristics of GaAs photovoltaic converters. A short-wavelength peak with a maximum at around 935 nm is associated with absorption in the residual QW, and the long-wavelength peak (1015–1030 nm) is due to absorption in the QWDs. Investigation by transmission electron microscopy demonstrates that an increase in the number of InGaAs layers leads to stronger elastic stresses, which, in turn, increases the carrier confinement energy in the QWDs and lead to a corresponding long-wavelength shift of the internal quantum efficiency spectrum.},
doi = {10.1134/S1063782618100147},
journal = {Semiconductors},
issn = {1063-7826},
number = 10,
volume = 52,
place = {United States},
year = {2018},
month = {10}
}