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Title: Impact of the Periphery Electrostatic Field on the Photovoltaic Effect in Metal–Semiconductor Contacts with a Schottky Barrier

Abstract

Studies of an electrostatic system of flat metal–semiconductor contacts with a Schottky barrier reveals a nontrivial dependence of their current and voltage photosensitivity (the photovoltaic effect) on the contact shape. The specific features of using the photovoltaic effect in such contacts are determined, to a great extent, by the built-in periphery electrostatic field with an absolute value that depends on the contact perimeter and area. Thus, to increase the efficiency of light-to-electrical energy conversion by Schottky contacts, it is necessary to use optimization techniques based on the concepts of the proposed physical model of an electrostatic system of flat Schottky contacts with regard to periphery electrostatic fields. The “hot electron resonance” effect, which enhances the external quantum efficiency of photodiodes with a Schottky barrier, can be explained by enhancement of the field emission of electrons by the periphery electrostatic field.

Authors:
 [1]
  1. Scientific and Research Institute of Semiconductors (Russian Federation)
Publication Date:
OSTI Identifier:
22749775
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 10; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; ELECTROSTATICS; ENERGY CONVERSION; FIELD EMISSION; PHOTOVOLTAIC EFFECT; QUANTUM EFFICIENCY; SOLAR CELLS

Citation Formats

Torkhov, N. A., E-mail: trkf@mail.ru. Impact of the Periphery Electrostatic Field on the Photovoltaic Effect in Metal–Semiconductor Contacts with a Schottky Barrier. United States: N. p., 2018. Web. doi:10.1134/S1063782618100202.
Torkhov, N. A., E-mail: trkf@mail.ru. Impact of the Periphery Electrostatic Field on the Photovoltaic Effect in Metal–Semiconductor Contacts with a Schottky Barrier. United States. doi:10.1134/S1063782618100202.
Torkhov, N. A., E-mail: trkf@mail.ru. Mon . "Impact of the Periphery Electrostatic Field on the Photovoltaic Effect in Metal–Semiconductor Contacts with a Schottky Barrier". United States. doi:10.1134/S1063782618100202.
@article{osti_22749775,
title = {Impact of the Periphery Electrostatic Field on the Photovoltaic Effect in Metal–Semiconductor Contacts with a Schottky Barrier},
author = {Torkhov, N. A., E-mail: trkf@mail.ru},
abstractNote = {Studies of an electrostatic system of flat metal–semiconductor contacts with a Schottky barrier reveals a nontrivial dependence of their current and voltage photosensitivity (the photovoltaic effect) on the contact shape. The specific features of using the photovoltaic effect in such contacts are determined, to a great extent, by the built-in periphery electrostatic field with an absolute value that depends on the contact perimeter and area. Thus, to increase the efficiency of light-to-electrical energy conversion by Schottky contacts, it is necessary to use optimization techniques based on the concepts of the proposed physical model of an electrostatic system of flat Schottky contacts with regard to periphery electrostatic fields. The “hot electron resonance” effect, which enhances the external quantum efficiency of photodiodes with a Schottky barrier, can be explained by enhancement of the field emission of electrons by the periphery electrostatic field.},
doi = {10.1134/S1063782618100202},
journal = {Semiconductors},
issn = {1063-7826},
number = 10,
volume = 52,
place = {United States},
year = {2018},
month = {10}
}