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Title: Luminescence Spectra of High-Power Violet and Ultraviolet Gallium Nitride-Based LEDs

Abstract

The electroluminescence spectra of high-power light-emitting diodes (LEDs) based on p–n heterostructures of the InGaN/AlGaN/GaN type emitting in the visible short-wavelength and ultraviolet spectral regions (the range from 370 to 460 nm) are investigated. The shape of spectra is described by a model taking into account a two-dimensional combined density of states and potential fluctuations. Additional long-wavelength peaks are found in emission spectra. The emission power of ultraviolet and violet LEDs reaches 233 mW at a current of 350 mA, and the external quantum yield reaches 23% at the maximum (near a current of 100 mA).

Authors:
 [1];  [2]; ;  [1]
  1. Moscow State University (Russian Federation)
  2. Scientific-and-Production Center “Optel” (Russian Federation)
Publication Date:
OSTI Identifier:
22749774
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 10; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DENSITY OF STATES; EMISSION SPECTRA; GALLIUM NITRIDES; LIGHT EMITTING DIODES; TWO-DIMENSIONAL CALCULATIONS; TWO-DIMENSIONAL SYSTEMS; ULTRAVIOLET RADIATION

Citation Formats

Volkov, V. V., Kogan, L. M., Turkin, A. N., E-mail: andrey@turkin.su, and Yunovich, A. E.. Luminescence Spectra of High-Power Violet and Ultraviolet Gallium Nitride-Based LEDs. United States: N. p., 2018. Web. doi:10.1134/S1063782618100226.
Volkov, V. V., Kogan, L. M., Turkin, A. N., E-mail: andrey@turkin.su, & Yunovich, A. E.. Luminescence Spectra of High-Power Violet and Ultraviolet Gallium Nitride-Based LEDs. United States. doi:10.1134/S1063782618100226.
Volkov, V. V., Kogan, L. M., Turkin, A. N., E-mail: andrey@turkin.su, and Yunovich, A. E.. Mon . "Luminescence Spectra of High-Power Violet and Ultraviolet Gallium Nitride-Based LEDs". United States. doi:10.1134/S1063782618100226.
@article{osti_22749774,
title = {Luminescence Spectra of High-Power Violet and Ultraviolet Gallium Nitride-Based LEDs},
author = {Volkov, V. V. and Kogan, L. M. and Turkin, A. N., E-mail: andrey@turkin.su and Yunovich, A. E.},
abstractNote = {The electroluminescence spectra of high-power light-emitting diodes (LEDs) based on p–n heterostructures of the InGaN/AlGaN/GaN type emitting in the visible short-wavelength and ultraviolet spectral regions (the range from 370 to 460 nm) are investigated. The shape of spectra is described by a model taking into account a two-dimensional combined density of states and potential fluctuations. Additional long-wavelength peaks are found in emission spectra. The emission power of ultraviolet and violet LEDs reaches 233 mW at a current of 350 mA, and the external quantum yield reaches 23% at the maximum (near a current of 100 mA).},
doi = {10.1134/S1063782618100226},
journal = {Semiconductors},
issn = {1063-7826},
number = 10,
volume = 52,
place = {United States},
year = {2018},
month = {10}
}