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Title: Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates

Abstract

The characteristics of lasers of the 1.44–1.46-μm optical range grown on GaAs substrates using a metamorphic buffer are studied. The active region of the laser contains 10 rows of InAs/In{sub 0.4}Ga{sub 0.6}As/In{sub 0.2}Ga{sub 0.8}As quantum dots. It is shown that the use of special selective high-temperature annealing along with the application of short-period In{sub 0.2}Ga{sub 0.8}As/In{sub 0.2}Al{sub 0.3}Ga{sub 0.5}As short-period superlattices makes it possible to substantially decrease the density of threading dislocations in the active region. A threshold current density of 1300 A cm{sup –2}, external differential quantum efficiency of 38%, and maximal pulsed-mode output power of 13 W are attained for a laser with a broad area 3 mm in length.

Authors:
;  [1]; ;  [2]; ;  [3]; ;  [2];  [1]
  1. St. Petersburg Academic University (Russian Federation)
  2. Ioffe Institute (Russian Federation)
  3. Submicron Heterostructures for Mircoelectronics, Research & Engineering Center,Russian Academy of Sciences (Russian Federation)
Publication Date:
OSTI Identifier:
22749772
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 10; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; CURRENT DENSITY; GALLIUM ARSENIDES; INDIUM ARSENIDES; LASERS; QUANTUM DOTS; QUANTUM EFFICIENCY; SUBSTRATES; TEMPERATURE RANGE 0400-1000 K; THRESHOLD CURRENT

Citation Formats

Maximov, M. V., E-mail: maximov@beam.ioffe.rssi.ru, Nadtochiy, A. M., Shernyakov, Yu. M., Payusov, A. S., Vasil’ev, A. P., Ustinov, V. M., Serin, A. A., Gordeev, N. Yu., and Zhukov, A. E.. Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates. United States: N. p., 2018. Web. doi:10.1134/S1063782618100093.
Maximov, M. V., E-mail: maximov@beam.ioffe.rssi.ru, Nadtochiy, A. M., Shernyakov, Yu. M., Payusov, A. S., Vasil’ev, A. P., Ustinov, V. M., Serin, A. A., Gordeev, N. Yu., & Zhukov, A. E.. Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates. United States. doi:10.1134/S1063782618100093.
Maximov, M. V., E-mail: maximov@beam.ioffe.rssi.ru, Nadtochiy, A. M., Shernyakov, Yu. M., Payusov, A. S., Vasil’ev, A. P., Ustinov, V. M., Serin, A. A., Gordeev, N. Yu., and Zhukov, A. E.. Mon . "Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates". United States. doi:10.1134/S1063782618100093.
@article{osti_22749772,
title = {Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates},
author = {Maximov, M. V., E-mail: maximov@beam.ioffe.rssi.ru and Nadtochiy, A. M. and Shernyakov, Yu. M. and Payusov, A. S. and Vasil’ev, A. P. and Ustinov, V. M. and Serin, A. A. and Gordeev, N. Yu. and Zhukov, A. E.},
abstractNote = {The characteristics of lasers of the 1.44–1.46-μm optical range grown on GaAs substrates using a metamorphic buffer are studied. The active region of the laser contains 10 rows of InAs/In{sub 0.4}Ga{sub 0.6}As/In{sub 0.2}Ga{sub 0.8}As quantum dots. It is shown that the use of special selective high-temperature annealing along with the application of short-period In{sub 0.2}Ga{sub 0.8}As/In{sub 0.2}Al{sub 0.3}Ga{sub 0.5}As short-period superlattices makes it possible to substantially decrease the density of threading dislocations in the active region. A threshold current density of 1300 A cm{sup –2}, external differential quantum efficiency of 38%, and maximal pulsed-mode output power of 13 W are attained for a laser with a broad area 3 mm in length.},
doi = {10.1134/S1063782618100093},
journal = {Semiconductors},
issn = {1063-7826},
number = 10,
volume = 52,
place = {United States},
year = {2018},
month = {10}
}