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Title: Positive Charge in SOS Heterostructures with Interlayer Silicon Oxide

Abstract

The continuous transfer of (001)Si layers 0.2–1.7 μm thick by implanted hydrogen to the c-sapphire surface during direct bonding at high temperatures of 300–500°C is demonstrated for the first time. The formation of an intermediate silicon-oxide layer SiO{sub x} during subsequent heat treatments at 800–1100°C, whose increase in thickness (up to 3 nm) correlates with an increase in the positive charge Q{sub i} at the heterointerface to ~1.5 × 10{sup 12} cm{sup –2} in contrast to the negative charge at the SiO{sub x}/Al{sub 2}O{sub 3} ALD heterointerface. During silicon-layer transfer to sapphire with a thermal silicon-dioxide layer, Q{sub i} decreases by more than an order of magnitude to 5 × 10{sup 10} cm{sup –2} with an increase in the SiO{sub 2} thickness from 50 to 400 nm, while the electron and hole mobilities barely differ from the values in bulk silicon. Based on these results, a qualitative model of the formation of positively charged oxygen vacancies in a 5-nm sapphire layer near the bonding interface is proposed.

Authors:
; ;  [1]
  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences (Russian Federation)
Publication Date:
OSTI Identifier:
22749767
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 10; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; HEAT TREATMENTS; HOLE MOBILITY; OXIDATION; SILICA; SILICON OXIDES; TEMPERATURE RANGE 0400-1000 K; THICKNESS

Citation Formats

Popov, V. P., E-mail: popov@isp.nsc.ru, Antonov, V. A., and Vdovin, V. I. Positive Charge in SOS Heterostructures with Interlayer Silicon Oxide. United States: N. p., 2018. Web. doi:10.1134/S1063782618100160.
Popov, V. P., E-mail: popov@isp.nsc.ru, Antonov, V. A., & Vdovin, V. I. Positive Charge in SOS Heterostructures with Interlayer Silicon Oxide. United States. doi:10.1134/S1063782618100160.
Popov, V. P., E-mail: popov@isp.nsc.ru, Antonov, V. A., and Vdovin, V. I. Mon . "Positive Charge in SOS Heterostructures with Interlayer Silicon Oxide". United States. doi:10.1134/S1063782618100160.
@article{osti_22749767,
title = {Positive Charge in SOS Heterostructures with Interlayer Silicon Oxide},
author = {Popov, V. P., E-mail: popov@isp.nsc.ru and Antonov, V. A. and Vdovin, V. I.},
abstractNote = {The continuous transfer of (001)Si layers 0.2–1.7 μm thick by implanted hydrogen to the c-sapphire surface during direct bonding at high temperatures of 300–500°C is demonstrated for the first time. The formation of an intermediate silicon-oxide layer SiO{sub x} during subsequent heat treatments at 800–1100°C, whose increase in thickness (up to 3 nm) correlates with an increase in the positive charge Q{sub i} at the heterointerface to ~1.5 × 10{sup 12} cm{sup –2} in contrast to the negative charge at the SiO{sub x}/Al{sub 2}O{sub 3} ALD heterointerface. During silicon-layer transfer to sapphire with a thermal silicon-dioxide layer, Q{sub i} decreases by more than an order of magnitude to 5 × 10{sup 10} cm{sup –2} with an increase in the SiO{sub 2} thickness from 50 to 400 nm, while the electron and hole mobilities barely differ from the values in bulk silicon. Based on these results, a qualitative model of the formation of positively charged oxygen vacancies in a 5-nm sapphire layer near the bonding interface is proposed.},
doi = {10.1134/S1063782618100160},
journal = {Semiconductors},
issn = {1063-7826},
number = 10,
volume = 52,
place = {United States},
year = {2018},
month = {10}
}