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Title: Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography

Abstract

The selective epitaxial growth of GaN by metalorganic vapor-phase epitaxy combined with ion-beam etching is investigated. To this end, partially masked GaN epitaxial layers are fabricated by depositing a thin Si{sub 3}N{sub 4} layer onto the surface in a single technological process with the growth of GaN and the subsequent opening of windows of different shapes in this layer by an ion beam. Selective epitaxial growth regimes are studied. It is shown that, in a situation where the total area of the windows in the mask is small relative to the total area of the sample, the required epitaxy duration should be 5–10 s, which impairs the reproducibility of the parameters of the epitaxial process. It is also shown that the mechanism of the selective growth of submicrometer objects differs significantly from that for planar layers and selectively grown layers with dimensions of ~1 μm or greater. The effect of precursor (trimethylgallium and ammonia) fluxes on the character of selective epitaxy is examined. To investigate the possibilities of varying mask topology for fabricating model objects with regard to photonic crystals, the impact of the shape and orientation of the windows in the Si{sub 3}N{sub 4} mask on the character ofmore » selective epitaxy is studied.« less

Authors:
 [1];  [2]; ;  [1];  [2]; ; ;  [1]
  1. Ioffe Institute (Russian Federation)
  2. Research and Engineering Center on Submicron Heterostructures for Microelectronics,Russian Academy of Sciences (Russian Federation)
Publication Date:
OSTI Identifier:
22749765
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 10; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; GALLIUM NITRIDES; ION BEAMS; RESPIRATORS; SILICON NITRIDES; VAPOR PHASE EPITAXY; WINDOWS

Citation Formats

Lundin, W. V., E-mail: Lundin@vpegroup.ioffe.ru, Tsatsulnikov, A. F., Rodin, S. N., Sakharov, A. V., Usov, S. O., Mitrofanov, M. I., Levitskii, I. V., and Evtikhiev, V. P. Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography. United States: N. p., 2018. Web. doi:10.1134/S106378261810007X.
Lundin, W. V., E-mail: Lundin@vpegroup.ioffe.ru, Tsatsulnikov, A. F., Rodin, S. N., Sakharov, A. V., Usov, S. O., Mitrofanov, M. I., Levitskii, I. V., & Evtikhiev, V. P. Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography. United States. doi:10.1134/S106378261810007X.
Lundin, W. V., E-mail: Lundin@vpegroup.ioffe.ru, Tsatsulnikov, A. F., Rodin, S. N., Sakharov, A. V., Usov, S. O., Mitrofanov, M. I., Levitskii, I. V., and Evtikhiev, V. P. Mon . "Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography". United States. doi:10.1134/S106378261810007X.
@article{osti_22749765,
title = {Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography},
author = {Lundin, W. V., E-mail: Lundin@vpegroup.ioffe.ru and Tsatsulnikov, A. F. and Rodin, S. N. and Sakharov, A. V. and Usov, S. O. and Mitrofanov, M. I. and Levitskii, I. V. and Evtikhiev, V. P.},
abstractNote = {The selective epitaxial growth of GaN by metalorganic vapor-phase epitaxy combined with ion-beam etching is investigated. To this end, partially masked GaN epitaxial layers are fabricated by depositing a thin Si{sub 3}N{sub 4} layer onto the surface in a single technological process with the growth of GaN and the subsequent opening of windows of different shapes in this layer by an ion beam. Selective epitaxial growth regimes are studied. It is shown that, in a situation where the total area of the windows in the mask is small relative to the total area of the sample, the required epitaxy duration should be 5–10 s, which impairs the reproducibility of the parameters of the epitaxial process. It is also shown that the mechanism of the selective growth of submicrometer objects differs significantly from that for planar layers and selectively grown layers with dimensions of ~1 μm or greater. The effect of precursor (trimethylgallium and ammonia) fluxes on the character of selective epitaxy is examined. To investigate the possibilities of varying mask topology for fabricating model objects with regard to photonic crystals, the impact of the shape and orientation of the windows in the Si{sub 3}N{sub 4} mask on the character of selective epitaxy is studied.},
doi = {10.1134/S106378261810007X},
journal = {Semiconductors},
issn = {1063-7826},
number = 10,
volume = 52,
place = {United States},
year = {2018},
month = {10}
}