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Title: Nanostructure Growth in the Ga(In)AsP–GaAs System under Quasi-Equilibrium Conditions

Abstract

The formation of nanostructures on the surface of GaAs under quasi-equilibrium conditions in a quasi-closed volume from saturated phosphor and indium vapors in the presence of a Au catalyst with growth according to the “vapor–liquid–crystal” mechanism is considered for the first time. The influence of the growth temperature and size of Au drops on the morphology and composition of the fabricated nanostructures is studied. Experimental data on the formation of Ga(In)AsP nanocrystals on GaAs substrates with various orientations are presented. It is established that the temperature growth range of the nanostructures when using this method is 540–640°C with a drop size from 30 to 120 nm. It is shown that the size of the catalyst drops substantially affects the morphology and growth rate of the fabricated nanostructures while their composition weakly depends on both the drop size and the substrate orientation.

Authors:
; ; ; ; ;  [1]
  1. Ioffe Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22749764
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 10; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; GALLIUM ARSENIDES; NANOSTRUCTURES

Citation Formats

Karlina, L. B., E-mail: Karlin@mail.ioffe.ru, Vlasov, A. S., Soshnikov, I. P., Smirnova, I. P., Ber, B. Ya., and Smirnov, A. B.. Nanostructure Growth in the Ga(In)AsP–GaAs System under Quasi-Equilibrium Conditions. United States: N. p., 2018. Web. doi:10.1134/S1063782618100068.
Karlina, L. B., E-mail: Karlin@mail.ioffe.ru, Vlasov, A. S., Soshnikov, I. P., Smirnova, I. P., Ber, B. Ya., & Smirnov, A. B.. Nanostructure Growth in the Ga(In)AsP–GaAs System under Quasi-Equilibrium Conditions. United States. doi:10.1134/S1063782618100068.
Karlina, L. B., E-mail: Karlin@mail.ioffe.ru, Vlasov, A. S., Soshnikov, I. P., Smirnova, I. P., Ber, B. Ya., and Smirnov, A. B.. Mon . "Nanostructure Growth in the Ga(In)AsP–GaAs System under Quasi-Equilibrium Conditions". United States. doi:10.1134/S1063782618100068.
@article{osti_22749764,
title = {Nanostructure Growth in the Ga(In)AsP–GaAs System under Quasi-Equilibrium Conditions},
author = {Karlina, L. B., E-mail: Karlin@mail.ioffe.ru and Vlasov, A. S. and Soshnikov, I. P. and Smirnova, I. P. and Ber, B. Ya. and Smirnov, A. B.},
abstractNote = {The formation of nanostructures on the surface of GaAs under quasi-equilibrium conditions in a quasi-closed volume from saturated phosphor and indium vapors in the presence of a Au catalyst with growth according to the “vapor–liquid–crystal” mechanism is considered for the first time. The influence of the growth temperature and size of Au drops on the morphology and composition of the fabricated nanostructures is studied. Experimental data on the formation of Ga(In)AsP nanocrystals on GaAs substrates with various orientations are presented. It is established that the temperature growth range of the nanostructures when using this method is 540–640°C with a drop size from 30 to 120 nm. It is shown that the size of the catalyst drops substantially affects the morphology and growth rate of the fabricated nanostructures while their composition weakly depends on both the drop size and the substrate orientation.},
doi = {10.1134/S1063782618100068},
journal = {Semiconductors},
issn = {1063-7826},
number = 10,
volume = 52,
place = {United States},
year = {2018},
month = {10}
}