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Title: Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg{sub 1–x}Cd{sub x}Te Layers

Abstract

A method for calculating the states of multivalent donors and acceptors in Hg{sub 1–x}Cd{sub x}Te materials is developed. The ionization energies of deep acceptor and donor centers in epitaxial Hg{sub 1–x}Cd{sub x}Te films are calculated. The calculation method takes into account the influence of both the valence band and the conduction band on the states of impurity-defect centers. The calculations of energies for the levels of tetravalent acceptors and donors associated with crystalline structure defects indicate the intercenter nature of lines observed previously in the photoluminescence spectra of Hg{sub 1–x}Cd{sub x}Te films.

Authors:
; ; ; ;  [1];  [2];  [1]
  1. Institute for Physics of Microstructures, Russian Academy of Sciences (Russian Federation)
  2. Institut für Physik, Humboldt-Universität zu Berlin (Germany)
Publication Date:
OSTI Identifier:
22749736
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 11; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CALCULATION METHODS; DEFECTS; EPITAXY; FILMS; IMPURITIES; IONIZATION; MATERIALS; PHOTOLUMINESCENCE; SPECTRA; VALENCE

Citation Formats

Kozlov, D. V., E-mail: dvkoz@ipmras.ru, Rumyantsev, V. V., Morozov, S. V., Kadykov, A. M., Fadeev, M. A., Hübers, H. -W., and Gavrilenko, V. I. Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg{sub 1–x}Cd{sub x}Te Layers. United States: N. p., 2018. Web. doi:10.1134/S1063782618110131.
Kozlov, D. V., E-mail: dvkoz@ipmras.ru, Rumyantsev, V. V., Morozov, S. V., Kadykov, A. M., Fadeev, M. A., Hübers, H. -W., & Gavrilenko, V. I. Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg{sub 1–x}Cd{sub x}Te Layers. United States. doi:10.1134/S1063782618110131.
Kozlov, D. V., E-mail: dvkoz@ipmras.ru, Rumyantsev, V. V., Morozov, S. V., Kadykov, A. M., Fadeev, M. A., Hübers, H. -W., and Gavrilenko, V. I. Thu . "Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg{sub 1–x}Cd{sub x}Te Layers". United States. doi:10.1134/S1063782618110131.
@article{osti_22749736,
title = {Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg{sub 1–x}Cd{sub x}Te Layers},
author = {Kozlov, D. V., E-mail: dvkoz@ipmras.ru and Rumyantsev, V. V. and Morozov, S. V. and Kadykov, A. M. and Fadeev, M. A. and Hübers, H. -W. and Gavrilenko, V. I.},
abstractNote = {A method for calculating the states of multivalent donors and acceptors in Hg{sub 1–x}Cd{sub x}Te materials is developed. The ionization energies of deep acceptor and donor centers in epitaxial Hg{sub 1–x}Cd{sub x}Te films are calculated. The calculation method takes into account the influence of both the valence band and the conduction band on the states of impurity-defect centers. The calculations of energies for the levels of tetravalent acceptors and donors associated with crystalline structure defects indicate the intercenter nature of lines observed previously in the photoluminescence spectra of Hg{sub 1–x}Cd{sub x}Te films.},
doi = {10.1134/S1063782618110131},
journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 52,
place = {United States},
year = {2018},
month = {11}
}