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Title: Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells

Abstract

We report on the stimulated emission obtained in the wavelength range of 20.3–17.4 μm on the interband transitions at T = 8–50 K in HgCdTe quantum wells placed in a dielectric waveguide formed from wide-gap CdHgTe solid solution. Heterostructures with HgCdTe quantum wells are interesting for designing long-wavelength lasers operating in the wavelength range of 25–60 μm, which is not covered by currently available quantum cascade lasers. It is shown that the maximum temperature of stimulated emission is determined by the position of lateral maxima in the dispersion dependences in the first valence subband of the quantum well. Methods for suppressing nonradiative recombination in the structures with HgCdTe quantum wells are discussed.

Authors:
; ; ;  [1]; ;  [2]; ; ;  [1]; ;  [3]; ;  [1]
  1. Institute for Physics of Microstructures, Russian Academy of Sciences (Russian Federation)
  2. Moscow State University (Russian Federation)
  3. Institute for Semiconductor Physics, Russian Academy of Sciences, Siberian Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22749735
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 11; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DIELECTRIC MATERIALS; QUANTUM WELLS; SOLID SOLUTIONS; STIMULATED EMISSION

Citation Formats

Rumyantsev, V. V., E-mail: rumyantsev@ipm.sci-nnov.ru, Kulikov, N. S., Kadykov, A. M., Fadeev, M. A., Ikonnikov, A. V., Kazakov, A. S., Zholudev, M. S., Aleshkin, V. Ya., Utochkin, V. V., Mikhailov, N. N., Dvoretskii, S. A., Morozov, S. V., and Gavrilenko, V. I. Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells. United States: N. p., 2018. Web. doi:10.1134/S1063782618110234.
Rumyantsev, V. V., E-mail: rumyantsev@ipm.sci-nnov.ru, Kulikov, N. S., Kadykov, A. M., Fadeev, M. A., Ikonnikov, A. V., Kazakov, A. S., Zholudev, M. S., Aleshkin, V. Ya., Utochkin, V. V., Mikhailov, N. N., Dvoretskii, S. A., Morozov, S. V., & Gavrilenko, V. I. Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells. United States. doi:10.1134/S1063782618110234.
Rumyantsev, V. V., E-mail: rumyantsev@ipm.sci-nnov.ru, Kulikov, N. S., Kadykov, A. M., Fadeev, M. A., Ikonnikov, A. V., Kazakov, A. S., Zholudev, M. S., Aleshkin, V. Ya., Utochkin, V. V., Mikhailov, N. N., Dvoretskii, S. A., Morozov, S. V., and Gavrilenko, V. I. Thu . "Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells". United States. doi:10.1134/S1063782618110234.
@article{osti_22749735,
title = {Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells},
author = {Rumyantsev, V. V., E-mail: rumyantsev@ipm.sci-nnov.ru and Kulikov, N. S. and Kadykov, A. M. and Fadeev, M. A. and Ikonnikov, A. V. and Kazakov, A. S. and Zholudev, M. S. and Aleshkin, V. Ya. and Utochkin, V. V. and Mikhailov, N. N. and Dvoretskii, S. A. and Morozov, S. V. and Gavrilenko, V. I.},
abstractNote = {We report on the stimulated emission obtained in the wavelength range of 20.3–17.4 μm on the interband transitions at T = 8–50 K in HgCdTe quantum wells placed in a dielectric waveguide formed from wide-gap CdHgTe solid solution. Heterostructures with HgCdTe quantum wells are interesting for designing long-wavelength lasers operating in the wavelength range of 25–60 μm, which is not covered by currently available quantum cascade lasers. It is shown that the maximum temperature of stimulated emission is determined by the position of lateral maxima in the dispersion dependences in the first valence subband of the quantum well. Methods for suppressing nonradiative recombination in the structures with HgCdTe quantum wells are discussed.},
doi = {10.1134/S1063782618110234},
journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 52,
place = {United States},
year = {2018},
month = {11}
}